2N5179 www.centralsemi.com SILICON DESCRIPTION: NPN RF TRANSISTOR The CENTRAL SEMICONDUCTOR 2N5179 type is a silicon NPN RF transistor, manufactured by the epitaxial planar process, designed for VHF/UHF amplifier, oscillator, and converter applications. MARKING: FULL PART NUMBER TO-72 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 20 V CBO Collector-Emitter Voltage V 12 V CEO Emitter-Base Voltage V 2.5 V EBO Continuous Collector Current I 50 mA C Power Dissipation P 200 mW D Power Dissipation (T=25C) P 300 mW C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 0.58 C/mW JC Thermal Resistance 0.87 C/mW JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=15V 20 nA CBO CB I V =15V, T=150C 1.0 A CBO CB A BV I=1.0A 20 V CBO C BV I=3.0mA 12 V CEO C BV I=10A 2.5 V EBO E V I =10mA, I=1.0mA 0.4 V CE(SAT) C B V I =10mA, I=1.0mA 1.0 V BE(SAT) C B h V =1.0V, I=3.0mA 25 250 FE CE C h V =6.0V, I =2.0mA, f=1.0kHz 25 300 fe CE C f V =6.0V, I =5.0mA, f=100MHz 900 2000 MHz T CE C C V =10V, I =0, f=1.0MHz 1.0 pF ob CB E P V =10V, I =12mA, f=500MHz 20 mW o CB E G V =6.0V, I =5.0mA, f=200MHz 15 dB pe CE C NF V =6.0V, I =1.5mA, f=200MHz, R=50 4.5 dB CE C S r C V =6.0V, I =2.0mA, f=31.9MHz 3.0 14 ps b c CB C R1 (8-May 2013)2N5179 SILICON NPN RF TRANSISTOR TO-72 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector 4) Case MARKING: FULL PART NUMBER R1 (8-May 2013) www.centralsemi.com