DATA SHEET 2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS (T =25C) A SYMBOL UNITS Collector-Emitter Voltage V 50 V CEO Collector-Base Voltage V 50 V CBO Emitter-Base Voltage V 4.5 V EBO Collector Current I 50 mA C Power Dissipation P 350 mW D Power Dissipation (T =25C) P 1.0 W C D Operating and Storage Junction Temperature T ,T -65 to +150 C J stg Thermal Resistance 357 C/W JA Thermal Resistance 125 C/W JC ELECTRICAL CHARACTERISTICS (T =25C) A 2N5209 2N5210 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =35V 50 50 nA CBO CB I V =3.0V 50 50 nA EBO EB BV I=100A 50 50 V CBO C BV I=1.0mA 50 50 V CEO C V I =10mA, I =1.0mA 0.70 0.70 V CE(SAT) C B V V =5.0V, I =1.0mA 0.85 0.85 V BE(ON) CE C h V =5.0V, I =100A 100 300 200 600 FE CE C h V =5.0V, I=1.0mA 150 250 FE CE C h V =5.0V, I=10mA 150 250 FE CE C f V =5.0V, I=500A, f=20MHz 30 30 MHz T CE C C V =5.0V, I =0, f=100kHz 4.0 4.0 pF cb CB E h V =5.0V, I =1.0mA, f=1.0kHz 150 600 250 900 fe CE C NF V =5.0V, I =20A, R =22k , CE C S f=10Hz to 15.7kHz 3.0 2.0 dB NF V =5.0V, I =20A, R =10k , f=1.0kHz 4.0 3.0 dB CE C S (SEE REVERSE SIDE) R0 2N5209 / 2N5210 NPN SILICON TRANSISTOR TO-92 PACKAGE - MECHANICAL OUTLINE A B DIMENSIONS 1 2 3 INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A (DIA) 0.175 0.205 4.45 5.21 B 0.170 0.210 4.32 5.33 C 0.500 - 12.70 - D 0.016 0.022 0.41 0.56 C E 0.100 2.54 F 0.050 1.27 G 0.125 0.165 3.18 4.19 H 0.080 0.105 2.03 2.67 I 0.015 0.38 TO-92 (REV: R1) D Lead Code: 1) Emitter E 2) Base F 3) Collector G H I R1