X-On Electronics has gained recognition as a prominent supplier of 2N5322 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5322 Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N5322 Central Semiconductor

2N5322 electronic component of Central Semiconductor
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Part No.2N5322
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 100Vcbo 100Vcev 2A 75Vceo 6.0Vebo 10W
Datasheet: 2N5322 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.466 ea
Line Total: USD 4.47 
Availability - 720
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
720
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 4.466
10 : USD 3.553
25 : USD 3.476
100 : USD 2.651
500 : USD 2.387
1000 : USD 2.277
2500 : USD 2.266

   
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Frequency
Power Dissipation
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We are delighted to provide the 2N5322 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5322 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N5320 2N5321 NPN 2N5322 2N5323 PNP www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: SWITCHING TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series types are complementary silicon power transistors manufactured by the epitaxial planar process, designed for amplifier and switching applications. MARKING: FULL PART NUMBER TO-39 CASE 2N5320 2N5321 MAXIMUM RATINGS: (T =25C) SYMBOL 2N5322 2N5323 UNITS C Collector-Base Voltage V 100 75 V CBO Collector-Emitter Voltage V 100 75 V CEV Collector-Emitter Voltage V 75 50 V CEO Emitter-Base Voltage V 6.0 5.0 V EBO Continuous Collector Current I 2.0 A C Continuous Base Current I 1.0 A B Power Dissipation P 10 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 175 C/W JA Thermal Resistance 17.5 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C 2N5320 2N5321 2N5322 2N5323 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=80V - 0.5 - - A CBO CB I V=60V - - - 5.0 A CBO CB I V=5.0V - 0.1 - - A EBO EB I V=4.0V - - - 0.5 A EBO EB BV I =100A, V=1.5V 100 - 75 - V CEV C BE BV I=10mA 75 - 50 - V CEO C BV I=100A 6.0 - 5.0 - V EBO E V I =500mA, I =50mA (2N5320) - 0.5 - - V CE(SAT) C B V I =500mA, I =50mA (2N5321) - - - 0.8 V CE(SAT) C B V I =500mA, I =50mA (2N5322) - 0.7 - - V CE(SAT) C B V I =500mA, I =50mA (2N5323) - - - 1.2 V CE(SAT) C B V V =4.0V, I=500mA - 1.1 - 1.4 V BE(ON) CE C h V =4.0V, I=500mA 30 175 40 250 FE CE C h V =2.0V, I=1.0A 10 - - - FE CE C f V =4.0V, I=50mA, f=10MHz 50 - 50 - MHz T CE C R5 (11-May 2017)2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MAX UNITS t V =30V, I =500mA, I =50mA (2N5320, 2N5321) 80 ns on CC C B1 t V =30V, I =500mA, I =50mA (2N5322, 2N5323) 100 ns on CC C B1 t V =30V, I =500mA, I =I =50mA (2N5320, 2N5321) 800 ns off CC C B1 B2 t V =30V, I =500mA, I =I =50mA (2N5322, 2N5323) 1.0 s off CC C B1 B2 TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R5 (11-May 2017) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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