2N5336 2N5338 2N5337 2N5339 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5336 series devices are silicon epitaxial planar NPN transistors designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed. MARKING: FULL PART NUMBER TO-39 CASE 2N5336 2N5338 MAXIMUM RATINGS: (T =25C) SYMBOL 2N5337 2N5339 UNITS C Collector-Base Voltage V 80 100 V CBO Collector-Emitter Voltage V 80 100 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 5.0 A C Continuous Base Current I 1.0 A B Power Dissipation P 6.0 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 29 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C 2N5336 2N5338 2N5337 2N5339 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =Rated V - 10 - 10 A CBO CB CBO I V =75V, V=1.5V - 10 - - A CEV CE EB I V =90V, V=1.5V - - - 10 A CEV CE EB I V =75V, V =1.5V, T=150C - 1.0 - - mA CEV CE EB C I V =90V, V =1.5V, T=150C - - - 1.0 mA CEV CE EB C I V=75V - 100 - - A CEO CE I V=90V - - - 100 A CEO CE I V=6.0V - 100 - 100 A EBO EB BV I=50mA 80 - 100 - V CEO C V I =2.0A, I=200mA - 0.7 - 0.7 V CE(SAT) C B V I =5.0A, I=500mA - 1.2 - 1.2 V CE(SAT) C B V I =2.0A, I=200mA - 1.2 - 1.2 V BE(SAT) C B V I =5.0A, I=500mA - 1.8 - 1.8 V BE(SAT) C B h V =2.0V, I =500mA (2N5336, 2N5338) 30 - 30 - FE CE C h V =2.0V, I =500mA (2N5337, 2N5339) 60 - 60 - FE CE C h V =2.0V, I =2.0A (2N5336, 2N5338) 30 120 30 120 FE CE C h V =2.0V, I =2.0A (2N5337, 2N5339) 60 240 60 240 FE CE C h V =2.0V, I =5.0A (2N5336, 2N5338) 20 - 20 - FE CE C h V =2.0V, I =5.0A (2N5337, 2N5339) 40 - 40 - FE CE C R1 (4-April 2014)2N5336 2N5338 2N5337 2N5339 SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C 2N5336 2N5338 2N5337 2N5339 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS f V =10V, I=500mA, f=10MHz 30 - 30 - MHz T CE C C V =10V, I=0, f=100kHz - 250 - 250 pF ob CB E C V =2.0V, I=0, f=100kHz - 1.0 - 1.0 nF ib BE C t V =40V, I =2.0A, I=200mA - 200 - 200 ns on CC C B1 t V =40V, I =2.0A, I =I=200mA - 2.0 - 2.0 s s CC C B1 B2 t V =40V, I =2.0A, I =I=200mA - 200 - 200 ns f CC C B1 B2 TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (4-April 2014) www.centralsemi.com