2N5679 2N5680 PNP 2N5681 2N5682 NPN www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5679, 2N5681 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier and switching applications where high voltages are required. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) 2N5679 2N5680 A SYMBOL 2N5681 2N5682 UNITS Collector-Base Voltage V 100 120 V CBO Collector-Emitter Voltage V 100 120 V CEO Emitter-Base Voltage V 4.0 V EBO Continuous Collector Current I 1.0 A C Continuous Base Current I 0.5 A B Power Dissipation P 1.0 W D Power Dissipation (T=25C) P 10 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 175 C/W JA Thermal Resistance 17.5 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 1.0 A CBO CB CBO I V =Rated V , V =1.5V 1.0 A CEV CE CEO EB I V =Rated V , V =1.5V, T =150C 1.0 mA CEV CE CEO EB C I V =70V (2N5679, 2N5681) 10 A CEO CE I V =80V (2N5680, 2N5682) 10 A CEO CE I V=4.0V 1.0 A EBO EB BV I =10mA (2N5679, 2N5681) 100 V CEO C BV I =10mA (2N5680, 2N5682) 120 V CEO C V I =250mA, I=25mA 0.6 V CE(SAT) C B V I =500mA, I=50mA 1.0 V CE(SAT) C B V I =1.0A, I=200mA 2.0 V CE(SAT) C B V V =2.0V I=250mA 1.0 V BE(ON) CE C h V =2.0V, I=250mA 40 150 FE CE C h V =2.0V, I=1.0A 5.0 FE CE C h V =1.5V, I =0.2A, f=1.0kHz 40 fe CE C f V =10V, I =100mA, f=10MHz 30 MHz T CE C C V =20V, I =0, f=1.0MHz 50 pF ob CB E R2 (2-December 2013)2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (2-December 2013) www.centralsemi.com