2N5679 2N5680 PNP
2N5681 2N5682 NPN
www.centralsemi.com
COMPLEMENTARY
DESCRIPTION:
SILICON POWER TRANSISTORS
The CENTRAL SEMICONDUCTOR 2N5679, 2N5681
series devices are complementary silicon power
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
and switching applications where high voltages are
required.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (T =25C unless otherwise noted) 2N5679 2N5680
A
SYMBOL 2N5681 2N5682 UNITS
Collector-Base Voltage V 100 120 V
CBO
Collector-Emitter Voltage V 100 120 V
CEO
Emitter-Base Voltage V 4.0 V
EBO
Continuous Collector Current I 1.0 A
C
Continuous Base Current I 0.5 A
B
Power Dissipation P 1.0 W
D
Power Dissipation (T=25C) P 10 W
C D
Operating and Storage Junction Temperature T , T -65 to +200 C
J stg
Thermal Resistance 175 C/W
JA
Thermal Resistance 17.5 C/W
JC
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN MAX UNITS
I V =Rated V 1.0 A
CBO CB CBO
I V =Rated V , V =1.5V 1.0 A
CEV CE CEO EB
I V =Rated V , V =1.5V, T =150C 1.0 mA
CEV CE CEO EB C
I V =70V (2N5679, 2N5681) 10 A
CEO CE
I V =80V (2N5680, 2N5682) 10 A
CEO CE
I V=4.0V 1.0 A
EBO EB
BV I =10mA (2N5679, 2N5681) 100 V
CEO C
BV I =10mA (2N5680, 2N5682) 120 V
CEO C
V I =250mA, I=25mA 0.6 V
CE(SAT) C B
V I =500mA, I=50mA 1.0 V
CE(SAT) C B
V I =1.0A, I=200mA 2.0 V
CE(SAT) C B
V V =2.0V I=250mA 1.0 V
BE(ON) CE C
h V =2.0V, I=250mA 40 150
FE CE C
h V =2.0V, I=1.0A 5.0
FE CE C
h V =1.5V, I =0.2A, f=1.0kHz 40
fe CE C
f V =10V, I =100mA, f=10MHz 30 MHz
T CE C
C V =20V, I =0, f=1.0MHz 50 pF
ob CB E
R2 (2-December 2013)2N5679 2N5680 PNP
2N5681 2N5682 NPN
COMPLEMENTARY
SILICON POWER TRANSISTORS
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R2 (2-December 2013)
www.centralsemi.com