2N5783 PNP 2N5786 NPN www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5783 and 2N5786 types are Complementary Silicon Power Transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS C Collector-Base Voltage V 45 V CBO Collector-Emitter Voltage V 45 V CER Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 3.5 V EBO Continuous Collector Current I 3.5 A C Continuous Base Current I 1.0 A B Power Dissipation P 10 W D Power Dissipation (T=25C) P 1.0 W A D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 17.5 C/W JC Thermal Resistance 175 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =45V, V=1.5V 10 A CEV CE BE I V =45V, V =1.5V, T=150C 1.0 mA CEV CE BE C I V =40V, R=100 10 A CER CE BE I V =40V, R =100, T=150C 1.0 mA CER CE BE C I V=25V 100 A CEO CE I V=3.5V 10 A EBO EB BV I =10mA, R=100 45 V CER C BE BV I=10mA 40 V CEO C V I =1.6A, I=160mA 1.0 V CE(SAT) C B V I =3.2A, I=800mA 2.0 V CE(SAT) C B V V =2.0V, I=1.6A 1.5 V BE(ON) CE C h V =2.0V, I=1.6A 20 150 FE CE C h V =2.0V, I=3.2A 4.0 FE CE C f V =2.0V, I =100mA, f=4.0MHz (2N5783) 8.0 60 MHz T CE C f V =2.0V, I =100mA, f=200kHz (2N5786) 1.0 4.0 MHz T CE C h V =2.0V, I =100mA, f=1.0kHz 25 fe CE C t V =30V, I =1.0A, I =I =100mA (2N5783) 0.5 s on CC C B1 B2 t V =30V, I =1.0A, I =I =100mA (2N5786) 5.0 s on CC C B1 B2 t V =30V, I =1.0A, I =I =100mA (2N5783) 2.5 s off CC C B1 B2 t V =30V, I =1.0A, I =I =100mA (2N5786) 15 s off CC C B1 B2 R1 (21-September 2011)2N5783 PNP 2N5786 NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (21-September 2011) www.centralsemi.com