2N5820 2N5822 NPN
2N5821 2N5823 PNP
www.centralsemi.com
COMPLEMENTARY
DESCRIPTION:
SILICON TRANSISTORS
The CENTRAL SEMICONDUCTOR 2N5820 series
devices are epoxy molded complementary silicon
small signal transistors manufactured by the epitaxial
planar process designed for general purpose amplifier
applications where a high collector current rating is
required.
MARKING: FULL PART NUMBER
TO-92-18R CASE
MAXIMUM RATINGS: (T =25C unless otherwise noted)
A
SYMBOL UNITS
Collector-Base Voltage V 70 V
CBO
Collector-Emitter Voltage V 70 V
CES
Collector-Emitter Voltage V 60 V
CEO
Emitter-Base Voltage V 5.0 V
EBO
Continuous Collector Current I 750 mA
C
Peak Collector Current I 1.0 A
CM
Power Dissipation P 625 mW
D
Power Dissipation (T=25C) P 1.5 W
C D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance 200 C/W
JA
Thermal Resistance 83.3 C/W
JC
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN MAX UNITS
I V=25V 100 nA
CBO CB
I V =25V, T=100C 15 A
CBO CB A
I V=5.0V 10 A
EBO EB
BV I=10A 70 V
CES C
BV I=10mA 60 V
CEO C
BV I=10A 5.0 V
EBO E
V I =500mA, I=50mA 0.75 V
CE(SAT) C B
V I =500mA, I=50mA 1.2 V
BE(SAT) C B
V V =2.0V, I=500mA 0.6 1.1 V
BE(ON) CE C
h V =2.0V, I =2.0mA (2N5820, 21) 60 120
FE CE C
h V =2.0V, I =2.0mA (2N5822, 23) 100 250
FE CE C
h V =2.0V, I =500mA (2N5820, 21) 20
FE CE C
h V =2.0V, I =500mA (2N5822, 23) 25
FE CE C
f V =2.0V, I =50mA, f=20MHz (2N5820, 21) 100 MHz
T CE C
f V =2.0V, I =50mA, f=20MHz (2N5822, 23) 120 MHz
T CE C
C V =10V, I =0, f=1.0MHz 15 pF
ob CB C
C V =0.5V, I =0, f=1.0MHz 55 pF
ib EB E
R2 (17-November 2014)2N5820 2N5822 NPN
2N5821 2N5823 PNP
COMPLEMENTARY
SILICON TRANSISTORS
TO-92-18R CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Collector
2) Base
3) Emitter
MARKING:
FULL PART NUMBER
R2 (17-November 2014)
www.centralsemi.com