X-On Electronics has gained recognition as a prominent supplier of 2N5823 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5823 Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N5823 Central Semiconductor

2N5823 electronic component of Central Semiconductor
Images are for reference only
See Product Specifications
Part No.2N5823
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Small Signal Transistor
Datasheet: 2N5823 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.025 ea
Line Total: USD 3.02 
Availability - 1231
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1231
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 3.025
10 : USD 2.574
25 : USD 2.464
100 : USD 2.145
250 : USD 2.057
500 : USD 1.958
1000 : USD 1.815
2000 : USD 1.65
4000 : USD 1.628

   
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We are delighted to provide the 2N5823 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5823 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N5820 2N5822 NPN 2N5821 2N5823 PNP www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5820 series devices are epoxy molded complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier applications where a high collector current rating is required. MARKING: FULL PART NUMBER TO-92-18R CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 70 V CBO Collector-Emitter Voltage V 70 V CES Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 750 mA C Peak Collector Current I 1.0 A CM Power Dissipation P 625 mW D Power Dissipation (T=25C) P 1.5 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 83.3 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=25V 100 nA CBO CB I V =25V, T=100C 15 A CBO CB A I V=5.0V 10 A EBO EB BV I=10A 70 V CES C BV I=10mA 60 V CEO C BV I=10A 5.0 V EBO E V I =500mA, I=50mA 0.75 V CE(SAT) C B V I =500mA, I=50mA 1.2 V BE(SAT) C B V V =2.0V, I=500mA 0.6 1.1 V BE(ON) CE C h V =2.0V, I =2.0mA (2N5820, 21) 60 120 FE CE C h V =2.0V, I =2.0mA (2N5822, 23) 100 250 FE CE C h V =2.0V, I =500mA (2N5820, 21) 20 FE CE C h V =2.0V, I =500mA (2N5822, 23) 25 FE CE C f V =2.0V, I =50mA, f=20MHz (2N5820, 21) 100 MHz T CE C f V =2.0V, I =50mA, f=20MHz (2N5822, 23) 120 MHz T CE C C V =10V, I =0, f=1.0MHz 15 pF ob CB C C V =0.5V, I =0, f=1.0MHz 55 pF ib EB E R2 (17-November 2014)2N5820 2N5822 NPN 2N5821 2N5823 PNP COMPLEMENTARY SILICON TRANSISTORS TO-92-18R CASE - MECHANICAL OUTLINE LEAD CODE: 1) Collector 2) Base 3) Emitter MARKING: FULL PART NUMBER R2 (17-November 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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