2N5820 2N5822 NPN 2N5821 2N5823 PNP www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5820 series devices are epoxy molded complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier applications where a high collector current rating is required. MARKING: FULL PART NUMBER TO-92-18R CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 70 V CBO Collector-Emitter Voltage V 70 V CES Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 750 mA C Peak Collector Current I 1.0 A CM Power Dissipation P 625 mW D Power Dissipation (T=25C) P 1.5 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 83.3 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=25V 100 nA CBO CB I V =25V, T=100C 15 A CBO CB A I V=5.0V 10 A EBO EB BV I=10A 70 V CES C BV I=10mA 60 V CEO C BV I=10A 5.0 V EBO E V I =500mA, I=50mA 0.75 V CE(SAT) C B V I =500mA, I=50mA 1.2 V BE(SAT) C B V V =2.0V, I=500mA 0.6 1.1 V BE(ON) CE C h V =2.0V, I =2.0mA (2N5820, 21) 60 120 FE CE C h V =2.0V, I =2.0mA (2N5822, 23) 100 250 FE CE C h V =2.0V, I =500mA (2N5820, 21) 20 FE CE C h V =2.0V, I =500mA (2N5822, 23) 25 FE CE C f V =2.0V, I =50mA, f=20MHz (2N5820, 21) 100 MHz T CE C f V =2.0V, I =50mA, f=20MHz (2N5822, 23) 120 MHz T CE C C V =10V, I =0, f=1.0MHz 15 pF ob CB C C V =0.5V, I =0, f=1.0MHz 55 pF ib EB E R2 (17-November 2014)2N5820 2N5822 NPN 2N5821 2N5823 PNP COMPLEMENTARY SILICON TRANSISTORS TO-92-18R CASE - MECHANICAL OUTLINE LEAD CODE: 1) Collector 2) Base 3) Emitter MARKING: FULL PART NUMBER R2 (17-November 2014) www.centralsemi.com