2N6027
2N6028
www.centralsemi.com
SILICON
DESCRIPTION:
PROGRAMMABLE
The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028
UNIJUNCTION TRANSISTORS
devices are silicon programmable unijunction transistors,
manufactured in an epoxy molded package, designed for
adjustable (programmable) characteristics such as
Valley Current (I ), Peak Current (I ), and Intrinsic
V P
Standoff Ratio ().
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Gate-Cathode Forward Voltage V 40 V
GKF
Gate-Cathode Reverse Voltage V 5.0 V
GKR
Gate-Anode Reverse Voltage V 40 V
GAR
Anode-Cathode Voltage V 40 V
AK
Peak Non-Repetitive Forward Current (t=10s) I 5.0 A
TSM
Peak Repetitive Forward Current (t=20s, D.C.=1.0%) I 2.0 A
TRM
Peak Repetitive Forward Current (t=100s, D.C.=1.0%) I 1.0 A
TRM
DC Forward Anode Current I 150 mA
T
DC Gate Current I 50 mA
G
Power Dissipation P 300 mW
D
Operating Junction Temperature T -50 to +100 C
J
Storage Temperature T -55 to +150 C
stg
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
2N6027 2N6028
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I V=40V - 10 - 10 nA
GAO S
I V=40V - 50 - 50 nA
GKS S
I V =10V, R =1.0M - 2.0 - 0.15 A
P S G
I V =10V, R =10k - 5.0 - 1.0 A
P S G
I V =10V, R =1.0M - 50 - 25 A
V S G
I V =10V, R =10k 70 - 25 - A
V S G
I V =10V, R =200 1.5 - 1.0 - mA
V S G
V V =10V, R =1.0M 0.2 1.6 0.2 0.6 V
T S G
V V =10V, R =10k 0.2 0.6 0.2 0.6 V
T S G
V I=50mA - 1.5 - 1.5 V
F F
V V =20V, C=0.2F 6.0 - 6.0 - V
O B C
t V =20V, C=0.2F - 80 - 80 ns
r B C
R2 (4-February 2014)2N6027
2N6028
SILICON
PROGRAMMABLE
UNIJUNCTION TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Anode
2) Gate
3) Cathode
MARKING:
FULL PART NUMBER
R2 (4-February 2014)
www.centralsemi.com