2N6294 2N6295 NPN
2N6296 2N6297 PNP
www.centralsemi.com
COMPLEMENTARY SILICON
DESCRIPTION:
DARLINGTON POWER TRANSISTORS
The CENTRAL SEMICONDUCTOR 2N6294, 2N6296
series devices are complementary silicon Darlington
power transistors, manufactured by the epitaxial base
process, designed for high gain amplifier and medium
speed switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
2N6294 2N6295
MAXIMUM RATINGS: (T =25C) SYMBOL 2N6296 2N6297 UNITS
C
Collector-Base Voltage V 60 80 V
CBO
Collector-Emitter Voltage V 60 80 V
CEO
Emitter-Base Voltage V 5.0 V
EBO
Continuous Collector Current I 4.0 A
C
Peak Collector Current I 8.0 A
CM
Continuous Base Current I 80 mA
B
Power Dissipation P 50 W
D
Operating and Storage Junction Temperature T , T -65 to +200 C
J stg
Thermal Resistance 3.5 C/W
JC
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
C
SYMBOL TEST CONDITIONS MIN MAX UNITS
I V =Rated V , V=1.5V 0.5 mA
CEV CE CEO EB
I V =Rated V , V =1.5V, T=150C 5.0 mA
CEV CE CEO EB C
I V =Rated V 0.5 mA
CEO CE CEO
I V=5.0V 2.0 mA
EBO EB
BV I =50mA, (2N6294, 2N6296) 60 V
CEO C
BV I =50mA, (2N6295, 2N6297) 80 V
CEO C
V I =2.0A, I=8.0mA 2.0 V
CE(SAT) C B
V I =4.0A, I=40mA 3.0 V
CE(SAT) C B
V I =4.0A, I=40mA 4.0 V
BE(SAT) C B
V V =3.0V, I=2.0A 2.8 V
BE(ON) CE C
h V =3.0V, I=2.0A 750 18K
FE CE C
h V =3.0V, I=4.0A 100
FE CE C
h V =3.0V, I =1.5A, f=1.0kHz 300
fe CE C
f V =3.0V, I =1.5A, f=1.0MHz 4.0 MHz
T CE C
C V =10V, I =0, f=100kHz (NPN types) 120 pF
ob CB E
C V =10V, I =0, f=100kHz (PNP types) 200 pF
ob CB E
R2 (2-September 2014)2N6294 2N6295 NPN
2N6296 2N6297 PNP
COMPLEMENTARY SILICON
DARLINGTON POWER TRANSISTORS
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
R2 (2-September 2014)
www.centralsemi.com