2N6294 2N6295 NPN 2N6296 2N6297 PNP www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: DARLINGTON POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N6294, 2N6296 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE 2N6294 2N6295 MAXIMUM RATINGS: (T =25C) SYMBOL 2N6296 2N6297 UNITS C Collector-Base Voltage V 60 80 V CBO Collector-Emitter Voltage V 60 80 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 4.0 A C Peak Collector Current I 8.0 A CM Continuous Base Current I 80 mA B Power Dissipation P 50 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 3.5 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V , V=1.5V 0.5 mA CEV CE CEO EB I V =Rated V , V =1.5V, T=150C 5.0 mA CEV CE CEO EB C I V =Rated V 0.5 mA CEO CE CEO I V=5.0V 2.0 mA EBO EB BV I =50mA, (2N6294, 2N6296) 60 V CEO C BV I =50mA, (2N6295, 2N6297) 80 V CEO C V I =2.0A, I=8.0mA 2.0 V CE(SAT) C B V I =4.0A, I=40mA 3.0 V CE(SAT) C B V I =4.0A, I=40mA 4.0 V BE(SAT) C B V V =3.0V, I=2.0A 2.8 V BE(ON) CE C h V =3.0V, I=2.0A 750 18K FE CE C h V =3.0V, I=4.0A 100 FE CE C h V =3.0V, I =1.5A, f=1.0kHz 300 fe CE C f V =3.0V, I =1.5A, f=1.0MHz 4.0 MHz T CE C C V =10V, I =0, f=100kHz (NPN types) 120 pF ob CB E C V =10V, I =0, f=100kHz (PNP types) 200 pF ob CB E R2 (2-September 2014)2N6294 2N6295 NPN 2N6296 2N6297 PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R2 (2-September 2014) www.centralsemi.com