TM 2N6383 Central 2N6384 Semiconductor Corp. 2N6385 NPN SILICON POWER DESCRIPTION: DARLINGTON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (T =25C) SYMBOL 2N6383 2N6384 2N6385 UNITS C Collector-Base Voltage V 40 60 80 V CBO Collector-Emitter Voltage V 40 60 80 V CEX Collector-Emitter Voltage V 40 60 80 V CEO Emitter-Base Voltage V 5.0 V EBO Collector Current I 10 A C Peak Collector Current I 15 A CM Base Current I 250 mA B Power Dissipation P 100 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 1.75 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V , V =1.5V 300 A CEV CEV CEO BE(off) I V =Rated V , V =1.5V, T =150C 3.0 mA CEV CEV CEO C BE(off) I V =Rated V 1.0 mA CEO CE CEO I V =5.0V 10 mA EBO EB BV I =200mA (2N6383) 40 V CEO C BV I =200mA (2N6384) 60 V CEO C BV I =200mA (2N6385) 80 V CEO C BV I =200mA, R =100 (2N6383) 40 V CER C BE BV I =200mA, R =100 (2N6384) 60 V CER C BE BV I =200mA, R =100 (2N6385) 80 V CER C BE BV I =200mA, V =1.5V (2N6383) 40 V CEV C BE(off) BV I =200mA, V =1.5V (2N6384) 60 V CEV C BE(off) BV I =200mA, V =1.5V (2N6385) 80 V CEV C BE(off) R1 (28-August 2008)2N6383 TM 2N6384 2N6385 Central Semiconductor Corp. NPN SILICON POWER DARLINGTON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS V I =5.0A, I =10mA 2.0 V CE(SAT) C B V I =10A, I =100mA 3.0 V CE(SAT) C B V V =3.0V, I =5.0A 2.8 V BE(ON) CE C V V =3.0V, I =10A 4.5 V BE(ON) CE C h V =3.0V, I =5.0A 1K 20K FE CE C h V =3.0V, I =10A 100 FE CE C V I =10A 4.0 V F F C V =10V, I =0, f=1.0MHz 200 pF ob CB E h V =5.0V, I =1.0A, f=1.0MHz 20 he CE C h V =5.0V, I =1.0A, f=1.0kHz 1K he CE C TO-3 CASE - MECHANICAL OUTLINE R2 LEAD CODE: 1) Base 2) Emitter C) Collector MARKING: FULL PART NUMBER R1 (28-August 2008)