2N6430 2N6431 NPN 2N6432 2N6433 PNP www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR 2N6430 series devices are complementary small signal silicon transistors manufactured by the epitaxial planar process, designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) 2N6430 2N6431 A SYMBOL 2N6432 2N6433 UNITS Collector-Base Voltage V 200 300 V CBO Collector-Emitter Voltage V 200 300 V CEO Emitter-Base Voltage (NPN) V 6.0 V EBO Emitter-Base Voltage (PNP) V 5.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation (T=25C) P 1.8 W C D Power Dissipation P 500 mW D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 0.35 C/mW JA Thermal Resistance 97.2 C/W JC 2N6430 2N6432 ELECTRICAL CHARACTERISTICS: (T =25C) 2N6431 2N6433 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =160V (2N6430, 2N6432) - 100 - 250 nA CBO CB I V =200V (2N6431, 2N6433) - 100 - 250 nA CBO CB I V=4.0V - 100 - - nA EBO EB I V=3.0V - - - 100 nA EBO EB BV I =100A (2N6430, 2N6432) 200 - 200 - V CBO C BV I =100A (2N6431, 2N6433) 300 - 300 - V CBO C BV I =1.0mA (2N6430, 2N6432) 200 - 200 - V CEO C BV I =1.0mA (2N6431, 2N6433) 300 - 300 - V CEO C BV I=100A 6.0 - 5.0 - V EBO E V I =20mA, I=2.0mA - 0.5 - 0.5 V CE(SAT) C B V I =20mA, I=2.0mA - 0.9 - 0.9 V BE(SAT) C B h V =10V, I=1.0mA 25 - 25 - FE CE C h V =10V, I=10mA 40 - 40 - FE CE C h V =10V, I=30mA 50 200 30 150 FE CE C R2 (3-April 2018)2N6430 2N6431 NPN 2N6432 2N6433 PNP COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C) A 2N6430 2N6432 2N6431 2N6433 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS f V =20V, I =10mA, f=100MHz 50 200 - - MHz T CE C f V =20V, I =10mA, f=20MHz - - 50 - MHz T CE C C V =20V, I =0, f=1.0MHz - 4.0 - 6.0 pF ob CB E TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (3-April 2018) www.centralsemi.com