2N6486 2N6487 2N6488 NPN 2N6489 2N6490 2N6491 PNP www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N6486, 2N6489 series types are complementary silicon power transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) 2N6486 2N6487 2N6488 C SYMBOL 2N6489 2N6490 2N6491 UNITS Collector-Base Voltage V 50 70 90 V CBO Collector-Emitter Voltage V 40 60 80 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 15 A C Continuous Base Current I 5.0 A B Power Dissipation P 75 W D Power Dissipation (T=25C) P 1.8 W A D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 1.67 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C) 2N6486 2N6487 2N6488 C 2N6489 2N6490 2N6491 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS I V =45V, V=1.5V - 500 - - - - A CEV CE EB I V =65V, V=1.5V - - - 500 - - A CEV CE EB I V =85V, V=1.5V - - - - - 500 A CEV CE EB I V = Rated V - 1.0 - 1.0 - 1.0 mA CEO CE CEO I V=5.0V - 1.0 - 1.0 - 1.0 mA EBO EB BV V =1.5V, I=200mA 50 - 70 - 90 - V CEV BE C BV I=200mA 40 - 60 - 80 - V CEO C V I =5.0A, I=0.5A - 1.3 - 1.3 - 1.3 V CE(SAT) C B V I =15A, I=5.0A - 3.5 - 3.5 - 3.5 V CE(SAT) C B V V =4.0V, I=5.0A - 1.3 - 1.3 - 1.3 V BE(ON) CE C V V =4.0V, I=15A - 3.5 - 3.5 - 3.5 V BE(ON) CE C h V =4.0V, I=5.0A 20 150 20 150 20 150 FE CE C h V =4.0V, I=15A 5.0 - 5.0 - 5.0 - FE CE C h V =4.0V, I=1.0A, f=1.0kHz 25 - 25 - 25 - fe CE C f V =4.0V, I=1.0A, f=1.0MHz 5.0 - 5.0 - 5.0 - MHz T CE C R1 (11-September 2012)2N6486 2N6487 2N6488 NPN 2N6489 2N6490 2N6491 PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R1 (11-September 2012) www.centralsemi.com