2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: HIGH VOLTAGE TRANSISTORS The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE 2N6515 2N6516 2N6517 MAXIMUM RATINGS: (T =25C) SYMBOL 2N6518 2N6519 2N6520 UNITS A Collector-Base Voltage V 250 300 350 V CBO Collector-Emitter Voltage V 250 300 350 V CEO Emitter-Base Voltage (NPN) V 6.0 V EBO Emitter-Base Voltage (PNP) V 5.0 V EBO Continuous Collector Current I 500 mA C Continuous Base Current I 250 mA B Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg 2N6515 2N6516 2N6517 ELECTRICAL CHARACTERISTICS: (T =25C) 2N6518 2N6519 2N6520 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS I V=150V - 50 - - - - nA CBO CB I V=200V - - - 50 - - nA CBO CB I V=250V - - - - - 50 nA CBO CB I V =5.0V (NPN) - 50 - 50 - 50 nA EBO EB I V =4.0V (PNP) - 50 - 50 - 50 nA EBO EB BV I=100A 250 - 300 - 350 - V CBO C BV I=1.0mA 250 - 300 - 350 - V CEO C BV I =10A (NPN) 6.0 - 6.0 - 6.0 - V EBO E BV I =10A (PNP) 5.0 - 5.0 - 5.0 - V EBO E V I =10mA, I=1.0mA - 0.30 - 0.30 - 0.30 V CE(SAT) C B V I =20mA, I=2.0mA - 0.35 - 0.35 - 0.35 V CE(SAT) C B V I =30mA, I=3.0mA - 0.50 - 0.50 - 0.50 V CE(SAT) C B V I =50mA, I=5.0mA - 1.0 - 1.0 - 1.0 V CE(SAT) C B V I =10mA, I=1.0mA - 0.75 - 0.75 - 0.75 V BE(SAT) C B V I =20mA, I=2.0mA - 0.85 - 0.85 - 0.85 V BE(SAT) C B V I =30mA, I=3.0mA - 0.90 - 0.90 - 0.90 V BE(SAT) C B V V =10V, I=100mA - 2.0 - 2.0 - 2.0 V BE(ON) CE C h V =10V, I=1.0mA 35 - 30 - 20 - FE CE C h V =10V, I=10mA 50 - 45 - 30 - FE CE C h V =10V, I=30mA 50 300 45 270 30 200 FE CE C h V =10V, I=50mA 45 220 40 200 20 200 FE CE C h V =10V, I=100mA 25 - 20 - 15 - FE CE C R2 (18-January 2016)2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C) A SYMBOL TEST CONDITIONS MIN MAX UNITS f V =20V, I =10mA, f=20MHz 40 200 MHz T CE C C V =20V, I =0, f=1.0MHz 6.0 pF cb CB E C V =0.5V, I =0, f=1.0MHz (NPN) 80 pF eb EB C C V =0.5V, I =0, f=1.0MHz (PNP) 100 pF eb EB C t V =100V, V =2.0V, I =50mA, I =10mA 200 ns on CC BE C B1 t V =100V, I =50mA, I =I=10mA 3.5 s off CC C B1 B2 TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (18-January 2016) www.centralsemi.com