DATA SHEET
BFX34
NPN SILICON TRANSISTOR
JEDEC TO-39 CASE
DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX34 is a silicon NPN transistor designed for switching and
general purpose applications where a high collector current (5.0 AMPS) is required.
MAXIMUM RATINGS (T =25C unless otherwise noted)
A
SYMBOL UNITS
Collector-Base Voltage V 120 V
CBO
Collector-Emitter Voltage V 60 V
CEO
Emitter-Base Voltage V 6.0 V
EBO
Collector Current I 5.0 A
C
Power Dissipation P 1.0 W
D
Power Dissipation (T =25C) P 5.0 W
C D
Operating and Storage
Junction Temperature T ,T -65 to +200 C
J stg
Thermal Resistance 175 C/W
JA
Thermal Resistance 35 C/W
JC
ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN MAX UNITS
I V=60V 10 A
CES CE
I V=4.0V 10 A
EBO EB
BV I=5.0mA 120 V
CBO C
BV I=100mA 60 V
CEO C
BV I=1.0mA 6.0 V
EBO E
V I =5.0A, I=0.5A 1.0 V
CE(SAT) C B
V I =5.0A, I=0.5A 1.6 V
BE(SAT) C B
h V =2.0V, I =2.0A 40 150
FE CE C
f V =5.0V, I=0.5A, f=20MHz 70 MHz
T CE C
C V =10V, I =0, f=1.0MHz 100 pF
ob CB E
C V =0.5V, I =0, f=1.0MHz 500 pF
ib EB C
t V =20V, I =5.0A, I = I =0.5A 0.6 s
on CC C B1 B2
t V =20V, I =5.0A, I = I =0.5A 1.2 s
off CC C B1 B2
(SEE REVERSE SIDE)
R1 BFX34 NPN SILICON TRANSISTOR
TO-39 PACKAGE - MECHANICAL OUTLINE
A
DIMENSIONS
INCHES MILLIMETERS
B
SYMBOL MIN MAX MIN MAX
A (DIA) 0.335 0.370 8.51 9.40
D B (DIA) 0.315 0.335 8.00 8.51
C - 0.040 - 1.02
D 0.240 0.260 6.10 6.60
E 0.500 - 12.70 -
C
F (DIA) 0.016 0.021 0.41 0.53
G (DIA) 0.200 5.08
E
H 0.100 2.54
I 0.028 0.034 0.71 0.86
J 0.029 0.045 0.74 1.14
TO-39 (REV: R1)
F
G
H
LEAD #2
LEAD #1 LEAD #3
45
J
I R1
Lead Code
1) Emitter
2) Base
3) Collector