BC109C TIN/LEAD Central Semiconductor

BC107,A,B BC108B,C www.centralsemi.com BC109B,C DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C) SYMBOL BC107 BC108 BC109 UNITS A Collector-Base Voltage V 50 30 30 V CBO Collector-Emitter Voltage V 45 25 25 V CEO Emitter-Base Voltage V 6.0 5.0 5.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 600 mW D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 175 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V =45V (BC107) 15 nA CBO CB I V =45V, T =125C (BC107) 4.0 A CBO CB A I V =25V (BC108, BC109) 15 nA CBO CB I V =25V, T =125C (BC108, BC109) 4.0 A CBO CB A BV I =2.0mA (BC107) 45 V CEO C BV I =2.0mA (BC108, BC109) 25 V CEO C BV I =10A (BC107) 6.0 V EBO E BV I =10A (BC108, BC109) 5.0 V EBO E V I =10mA, I=0.5mA 0.25 V CE(SAT) C B V I =100mA, I=5.0mA 0.6 V CE(SAT) C B V I =10mA, I=0.5mA 0.7 0.83 V BE(SAT) C B V I =100mA, I=5.0mA 1.0 1.05 V BE(SAT) C B V V =5.0V, I=2.0mA 0.55 0.7 V BE(ON) CE C V V =5.0V, I=10mA 0.77 V BE(ON) CE C h V =5.0V, I =10A (BC107B, BC108B, BC109B) 40 FE CE C h V =5.0V, I =10A (BC108C, BC109C) 100 FE CE C h V =5.0V, I =2.0mA (BC107) 110 450 FE CE C h V =5.0V, I =2.0mA (BC107A) 110 220 FE CE C h V =5.0V, I =2.0mA (BC107B, BC108B, BC109B) 200 450 FE CE C h V =5.0V, I =2.0mA (BC108C, BC109C) 420 800 FE CE C R1 (16-August 2012)BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS h V =5.0V, I =2.0mA, f=1.0kHz (BC107) 125 500 fe CE C h V =5.0V, I =2.0mA, f=1.0kHz (BC107A) 125 260 fe CE C h V =5.0V, I =2.0mA, f=1.0kHz (BC107B, BC108B, BC109B) 240 500 fe CE C h V =5.0V, I =2.0mA, f=1.0kHz (BC108C) 500 fe CE C h V =5.0V, I =2.0mA, f=1.0kHz (BC109C) 450 900 fe CE C f V =5.0V, I =10mA, f=100MHz 150 MHz T CE C C V =10V, I =0, f=1.0MHz 4.5 pF ob CB E NF V =5.0V, I =0.2mA, R =2.0k, B=200Hz, f=1.0kHz (BC107, BC108) 10 dB CE C g NF V =5.0V, I =0.2mA, R =2.0k, B=200Hz, f=1.0kHz (BC109) 4.0 dB CE C g TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (16-August 2012) www.centralsemi.com