BC184B
www.centralsemi.com
SILICON
DESCRIPTION:
NPN TRANSISTOR
The CENTRAL SEMICONDUCTOR BC184B is a silicon
NPN transistor designed for low level, low noise
amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Collector-Base Voltage V 45 V
CBO
Collector-Emitter Voltage V 30 V
CEO
Emitter-Base Voltage V 6.0 V
EBO
Continuous Collector Current I 200 mA
C
Power Dissipation P 300 mW
D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance 417 C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25C)
A
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I V=30V 15 nA
CBO CB
I V=4.0V 15 nA
EBO EB
BV I=10A 45 V
CBO C
BV I=2.0mA 30 V
CEO C
BV I=10A 6.0 V
EBO E
V I =10mA, I=0.5mA 0.25 V
CE(SAT) C B
V I =100mA, I=5.0mA 0.6 V
CE(SAT) C B
V I =100mA, I=5.0mA 1.2 V
BE(SAT) C B
V V =5.0V, I=10A 0.52 V
BE(ON) CE C
V V =5.0V, I=100A 0.55 V
BE(ON) CE C
V V =5.0V, I=2.0mA 0.55 0.7 V
BE(ON) CE C
V V =5.0V, I=10mA 0.68 V
BE(ON) CE C
h V =5.0V, I=10A 100
FE CE C
h V =5.0V, I=2.0mA 250
FE CE C
h V =5.0V, I=100mA 130
FE CE C
h V =5.0V, I =2.0mA, f=1.0kHz 240 500
fe CE C
C V =10V, I =0, f=1.0MHz 3.0 5.0 pF
ob CB E
C V =0.5V, I =0, f=1.0MHz 9.5 pF
ib EB C
f V =5.0V, I =10mA, f=100MHz 280 MHz
T CE C
NF V =5.0V, I =200A, R=2.0k,
CE C G
f=10Hz to 10kHz 4.0 dB
R0 (11-October 2016)BC184B
SILICON
NPN TRANSISTOR
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Collector
2) Base
3) Emitter
MARKING: FULL PART NUMBER
R0 (11-October 2016)
www.centralsemi.com