BC337 SERIES www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR BC337 series devices are silicon NPN transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 800 mA C Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 83.3 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=45V 100 nA CES CE I V=30V 100 nA CBO CB I V=4.0V 100 nA EBO EB BV I=100A 50 V CES C BV I=10mA 45 V CEO C BV I=10A 5.0 V EBO E V I =500mA, I=50mA 0.7 V CE(SAT) C B V V =1.0V, I=300mA 1.2 V BE(ON) CE C h V =1.0V, I =100mA (BC337) 100 630 FE CE C h V =1.0V, I =100mA (BC337-16) 100 250 FE CE C h V =1.0V, I =100mA (BC337-25) 160 400 FE CE C h V =1.0V, I =100mA (BC337-40) 250 630 FE CE C h V =1.0V, I=300mA 60 FE CE C f V =5.0V, I =10mA, f=100MHz 210 MHz T CE C C V =10V, I =0, f=1.0MHz 15 pF ob CB E R2 (6-August 2014)BC337 SERIES SILICON NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Collector 2) Base 3) Emitter MARKING: FULL PART NUMBER R2 (6-August 2014) www.centralsemi.com