BC337 SERIES
www.centralsemi.com
SILICON
DESCRIPTION:
NPN TRANSISTORS
The CENTRAL SEMICONDUCTOR BC337 series
devices are silicon NPN transistors designed for general
purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Collector-Base Voltage V 50 V
CBO
Collector-Emitter Voltage V 45 V
CEO
Emitter-Base Voltage V 5.0 V
EBO
Continuous Collector Current I 800 mA
C
Power Dissipation P 625 mW
D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance 200 C/W
JA
Thermal Resistance 83.3 C/W
JC
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I V=45V 100 nA
CES CE
I V=30V 100 nA
CBO CB
I V=4.0V 100 nA
EBO EB
BV I=100A 50 V
CES C
BV I=10mA 45 V
CEO C
BV I=10A 5.0 V
EBO E
V I =500mA, I=50mA 0.7 V
CE(SAT) C B
V V =1.0V, I=300mA 1.2 V
BE(ON) CE C
h V =1.0V, I =100mA (BC337) 100 630
FE CE C
h V =1.0V, I =100mA (BC337-16) 100 250
FE CE C
h V =1.0V, I =100mA (BC337-25) 160 400
FE CE C
h V =1.0V, I =100mA (BC337-40) 250 630
FE CE C
h V =1.0V, I=300mA 60
FE CE C
f V =5.0V, I =10mA, f=100MHz 210 MHz
T CE C
C V =10V, I =0, f=1.0MHz 15 pF
ob CB E
R2 (6-August 2014)BC337 SERIES
SILICON
NPN TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Collector
2) Base
3) Emitter
MARKING:
FULL PART NUMBER
R2 (6-August 2014)
www.centralsemi.com