X-On Electronics has gained recognition as a prominent supplier of BC846BT TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC846BT TR Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC846BT TR Central Semiconductor

BC846BT TR electronic component of Central Semiconductor
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See Product Specifications
Part No.BC846BT TR
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 80Vcbo 65Vceo 5.0Vebo 100mA
Datasheet: BC846BT TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3979 ea
Line Total: USD 0.4 
Availability - 4800
Ship by Tue. 24 Sep to Thu. 26 Sep
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4800
Ship by Tue. 24 Sep to Thu. 26 Sep
MOQ : 1
Multiples : 1
1 : USD 0.3979
10 : USD 0.2576
100 : USD 0.1782
1000 : USD 0.1265
3000 : USD 0.115
9000 : USD 0.1081
24000 : USD 0.1081
45000 : USD 0.1035
99000 : USD 0.1024

   
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We are delighted to provide the BC846BT TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC846BT TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC846T SERIES BC847T SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC846T and BC847T Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-523 CASE MAXIMUM RATINGS: (T =25C) SYMBOL BC847T BC846T UNITS A Collector-Base Voltage V 50 80 V CBO Collector-Emitter Voltage V 45 65 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 100 mA C Peak Collector Current I 200 mA CM Peak Base Current I 100 mA BM Power Dissipation P 250 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 500 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=30V 15 nA CBO CB I V =30V, T=150C 5.0 A CBO CB A I V=5.0V 100 nA EBO EB BV I =10A (BC847T) 50 V CBO C BV I =10A (BC846T) 80 V CBO C BV I =10mA (BC847T) 45 V CEO C BV I =10mA (BC846T) 65 V CEO C BV I=10A 5.0 V EBO E V I =10mA, I=0.5mA 0.20 V CE(SAT) C B V I =100mA, I=5.0mA 0.40 V CE(SAT) C B V I =2.0mA, V=5.0V 0.58 0.70 V BE(ON) C CE V I =10mA, V=5.0V 0.77 V BE(ON) C CE f V =5.0V, I =10mA, f=100MHz 100 MHz T CE C C V =10V, I =0, f=1.0MHz 1.5 pF c CB E C V =0.5V, I =0, f=1.0MHz 11 pF e EB C NF V =5.0V, I =200A, CE C R =2.0K f=1.0KHz, BW=200Hz 10 dB S BC846AT BC846BT BC847AT BC847BT BC847CT MIN MAX MIN MAX MIN MAX h V =5.0V, I=2.0mA 110 220 200 450 420 800 FE CE C R1 (20-November 2009)BC846T SERIES BC847T SERIES SURFACE MOUNT NPN SILICON TRANSISTOR SOT-523 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR DEVICE MARKING CODE BC846AT GT1 BC846BT GT2 BC847AT GT3 BC847BT GT4 BC847CT GT5 R1 (20-November 2009) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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