BC856T SERIES BC857T SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-523 CASE MAXIMUM RATINGS: (T =25C) SYMBOL BC857T BC856T UNITS A Collector-Base Voltage V 50 80 V CBO Collector-Emitter Voltage V 45 65 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 100 mA C Peak Collector Current I 200 mA CM Peak Base Current I 100 mA BM Power Dissipation P 250 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 500 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=30V 15 nA CBO CB I V =30V, T=150C 5.0 A CBO CB A I V=5.0V 100 nA EBO EB BV I =10A (BC857T) 50 V CBO C BV I =10A (BC856T) 80 V CBO C BV I =10mA (BC857T) 45 V CEO C BV I =10mA (BC856T) 65 V CEO C BV I=10A 5.0 V EBO E V I =10mA, I=0.5mA 0.20 V CE(SAT) C B V I =100mA, I=5.0mA 0.40 V CE(SAT) C B V I =2.0mA, V=5.0V 0.58 0.70 V BE(ON) C CE V I =10mA, V=5.0V 0.77 V BE(ON) C CE f V =5.0V, I =10mA, f=100MHz 100 MHz T CE C C V =10V, I =0, f=1.0MHz 2.5 pF c CB E C V =0.5V, I =0, f=1.0MHz 10 pF e EB C NF V =5.0V, I =200A, CE C R =2.0K, f=1.0KHz, BW=200Hz 10 dB S BC856AT BC856BT BC857AT BC857BT BC857CT MIN MAX MIN MAX MIN MAX h V =5.0V, I=2.0mA 125 250 220 475 420 800 FE CE C R1 (20-November 2009)BC856T SERIES BC857T SERIES SURFACE MOUNT PNP SILICON TRANSISTOR SOT-523 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR DEVICE MARKING CODE BC856AT GT6 BC856BT GT7 BC857AT GT8 BC857BT GT9 BC857CT GT0 R1 (20-November 2009) www.centralsemi.com