BCY58, VII, VIII, IX, X BCY59, VII, VIII, IX, X www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR BCY58 and BCY59 series types are silicon NPN epitaxial planar transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) SYMBOL BCY58 BCY59 UNITS A Collector-Base Voltage V 32 45 V CBO Collector-Emitter Voltage V 32 45 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 100 mA C Peak Collector Current I 200 mA CM Peak Base Current I 200 mA BM Power Dissipation P 340 mW D Power Dissipation (T=25C) P 1.0 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 450 C/W JA Thermal Resistance 150 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 10 nA CBO CB CBO I V =Rated V , T=150C 10 A CBO CB CBO A I V=5.0V 10 nA EBO EB BV I =10A (BCY58) 32 V CBO C BV I =10A (BCY59) 45 V CBO C BV I =2.0mA (BCY58) 32 V CEO C BV I =2.0mA (BCY59) 45 V CEO C BV I=1.0A 7.0 V EBO E V I =10mA, I=250A 0.35 V CE(SAT) C B V I =100mA, I=2.5mA 0.70 V CE(SAT) C B V I =10mA, I=250A 0.60 0.85 V BE(SAT) C B V I =100mA, I=2.5mA 0.75 1.20 V BE(SAT) C B BCY58-VII BCY58-VIII BCY58-IX BCY58-X BCY59-VII BCY59-VIII BCY59-IX BCY59-X MIN TYP MAX MIN MAX MIN MAX MIN MAX h V =5.0V, I=10A - 20 - 20 - 40 - 100 - FE CE C h V =5.0V, I=2.0mA 120 - 220 180 310 250 460 380 630 FE CE C h V =1.0V, I=10mA 80 - - 120 400 160 630 240 1000 FE CE C h V =1.0V, I=100mA 40 - - 45 - 60 - 60 - FE CE C R2 (8-November 2013)BCY58, VII, VIII, IX, X BCY59, VII, VIII, IX, X SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS f V =5.0V, I =10mA, f=100MHz 150 MHz T CE C C V =10V, I =0, f=1.0MHz 5.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 15 pF ib EB C NF V =5.0V, I =0.2mA, R =2.0k, f=1.0kHz, B=200Hz 10 dB CE C s t V =10V, I =10mA, I =I=1.0mA 85 150 ns on CC C B1 B2 t V =10V, I =10mA, I =I=1.0mA 35 ns d CC C B1 B2 t V =10V, I =10mA, I =I=1.0mA 50 ns r CC C B1 B2 t V =10V, I =10mA, I =I=1.0mA 450 800 ns off CC C B1 B2 t V =10V, I =10mA, I =I=1.0mA 400 ns s CC C B1 B2 t V =10V, I =10mA, I =I=1.0mA 80 ns f CC C B1 B2 t V =10V, I =100mA, I =I=10mA 55 150 ns on CC C B1 B2 t V =10V, I =100mA, I =I=10mA 5.0 ns d CC C B1 B2 t V =10V, I =100mA, I =I=10mA 50 ns r CC C B1 B2 t V =10V, I =100mA, I =I=10mA 450 800 ns off CC C B1 B2 t V =10V, I =100mA, I =I=10mA 250 ns s CC C B1 B2 t V =10V, I =100mA, I =I=10mA 20 ns f CC C B1 B2 TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (8-November 2013) www.centralsemi.com