X-On Electronics has gained recognition as a prominent supplier of BCY78-X Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCY78-X Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCY78-X Central Semiconductor

BCY78-X electronic component of Central Semiconductor
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See Product Specifications
Part No.BCY78-X
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP 32Vcbo 5.0Vebo 100mA 340mW 1W
Datasheet: BCY78-X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.947 ea
Line Total: USD 1.95 
Availability - 1572
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1572
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.947
10 : USD 1.661
100 : USD 1.364
250 : USD 1.254
500 : USD 1.166
1000 : USD 1.0846
2000 : USD 0.9713
4000 : USD 0.968
10000 : USD 0.9614

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCY78-X from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCY78-X and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X www.centralsemi.com SILICON DESCRIPTION: PNP TRANSISTORS The CENTRAL SEMICONDUCTOR BCY78 and BCY79 series types are silicon PNP epitaxial planar transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) SYMBOL BCY78 BCY79 UNITS A Collector-Base Voltage V 32 45 V CBO Collector-Emitter Voltage V 32 45 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 100 mA C Peak Collector Current I 200 mA CM Peak Base Current I 200 mA BM Power Dissipation P 340 mW D Power Dissipation (T=25C) P 1.0 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 450 C/W JA Thermal Resistance 150 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 15 nA CBO CB CBO I V =Rated V , T=150C 10 A CBO CB CBO A I V=5.0V 20 nA EBO EB BV I =10A (BCY78) 32 V CBO C BV I =10A (BCY79) 45 V CBO C BV I =2.0mA (BCY78) 32 V CEO C BV I =2.0mA (BCY79) 45 V CEO C BV I=1.0A 5.0 V EBO E V I =10mA, I=250A 0.25 V CE(SAT) C B V I =100mA, I=2.5mA 0.80 V CE(SAT) C B V I =10mA, I=250A 0.60 0.85 V BE(SAT) C B V I =100mA, I=2.5mA 0.70 1.20 V BE(SAT) C B V V =5.0V, I=2.0mA 0.60 0.75 V BE(ON) CE C BCY78-VII BCY78-VIII BCY78-IX BCY78-X BCY79-VII BCY79-VIII BCY79-IX BCY79-X MIN TYP MAX MIN MAX MIN MAX MIN MAX h V =5.0V, I=10A - 140 - 30 - 40 - 100 - FE CE C h V =5.0V, I=2.0mA 120 - 220 180 310 250 460 380 630 FE CE C h V =1.0V, I=10mA 80 - - 120 400 160 630 240 1000 FE CE C h V =1.0V, I=100mA 40 - - 45 - 60 - 60 - FE CE C R4 (4-June 2013)BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS f V =5.0V, I =10mA, f=100MHz 100 MHz T CE C C V =10V, I =0, f=1.0MHz 7.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 15 pF ib EB C NF V =5.0V, I =0.2mA, R =2.0k, f=1.0kHz, B=200Hz 10 dB CE C s t V =3.0V, I =10mA, I =I=1.0mA 100 ns on CC C B1 B2 t V =3.0V, I =10mA, I =I=1.0mA 50 ns d CC C B1 B2 t V =3.0V, I =10mA, I =I=1.0mA 50 ns r CC C B1 B2 t V =3.0V, I =10mA, I =I=1.0mA 700 ns off CC C B1 B2 t V =3.0V, I =10mA, I =I=1.0mA 600 ns s CC C B1 B2 t V =3.0V, I =10mA, I =I=1.0mA 100 ns f CC C B1 B2 t V =10V, I =100mA, I =I=10mA 100 ns on CC C B1 B2 t V =10V, I =100mA, I =I=10mA 35 ns d CC C B1 B2 t V =10V, I =100mA, I =I=10mA 65 ns r CC C B1 B2 t V =10V, I =100mA, I =I=10mA 400 ns off CC C B1 B2 t V =10V, I =100mA, I =I=10mA 300 ns s CC C B1 B2 t V =10V, I =100mA, I =I=10mA 100 ns f CC C B1 B2 TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R4 (4-June 2013) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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