CEN-U05 CEN-U06 CEN-U07 NPN CEN-U55 CEN-U56 CEN-U57 PNP www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: POWER TRANSISTORS The CENTRAL SEMICONDUCTOR CEN-U05/U55 series types are complementary silicon power transistors designed for general purpose audio amplifier applications. These devices are electrically equivalent to National Semiconductors NSDU05, NSDU06, NSDU07, NSDU55, NSDU56, and NSDU57. MARKING: FULL PART NUMBER TO-202 CASE APPLICATIONS: FEATURES: Designed for general purpose high High Collector-Emitter breakdown voltage voltage amplifiers and drivers High 10W power dissipation CEN-U05 CEN-U06 CEN-U07 MAXIMUM RATINGS: (T =25C) SYMBOL CEN-U55 CEN-U56 CEN-U57 UNITS C Collector-Base Voltage V 60 80 100 V CBO Collector-Emitter Voltage V 60 80 100 V CEO Emitter-Base Voltage V 4.0 V EBO Continuous Collector Current I 2.0 A C Power Dissipation P 10 W D Power Dissipation (T=25C) P 1.75 W A D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 71.4 C/W JA Thermal Resistance 12.5 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 0.1 A CBO CB CBO I V=4.0V 100 A EBO EB BV I =1.0mA (CEN-U05, CEN-U55) 60 V CEO C BV I =1.0mA (CEN-U06, CEN-U56) 80 V CEO C BV I =1.0mA (CEN-U07, CEN-U57) 100 V CEO C V I =250mA, I=10mA 0.5 V CE(SAT) C B V I =250mA, I=25mA 0.35 V CE(SAT) C B V V =1.0V, I=250mA 1.2 V BE(ON) CE C h V =1.0V, I=50mA 80 FE CE C h V =1.0V, I=250mA 50 FE CE C h V =1.0V, I=500mA 20 FE CE C f V =5.0V, I =200mA, f=100MHz 50 MHz T CE C C V =10V, I =0, f=1.0MHz 30 pF ob CB E R2 (20-January 2012)CEN-U05 CEN-U06 CEN-U07 NPN CEN-U55 CEN-U56 CEN-U57 PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector Tab is common to pin 3 MARKING: FULL PART NUMBER R2 (20-January 2012) www.centralsemi.com