X-On Electronics has gained recognition as a prominent supplier of CEN-U07 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CEN-U07 Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

CEN-U07 Central Semiconductor

CEN-U07 electronic component of Central Semiconductor
Images are for reference only
See Product Specifications
Part No.CEN-U07
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Central Semiconductor Bipolar Transistors - BJT NPN Pwr Trans
Datasheet: CEN-U07 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.9384 ea
Line Total: USD 3.94

Availability - 633
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
192
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 3.3005
10 : USD 2.806
25 : USD 2.783
100 : USD 2.3345
250 : USD 2.3345
500 : USD 2.1275
1000 : USD 1.9435
5000 : USD 1.886

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CEN-U07 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CEN-U07 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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CEN-U05 CEN-U06 CEN-U07 NPN CEN-U55 CEN-U56 CEN-U57 PNP www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: POWER TRANSISTORS The CENTRAL SEMICONDUCTOR CEN-U05/U55 series types are complementary silicon power transistors designed for general purpose audio amplifier applications. These devices are electrically equivalent to National Semiconductors NSDU05, NSDU06, NSDU07, NSDU55, NSDU56, and NSDU57. MARKING: FULL PART NUMBER TO-202 CASE APPLICATIONS: FEATURES: Designed for general purpose high High Collector-Emitter breakdown voltage voltage amplifiers and drivers High 10W power dissipation CEN-U05 CEN-U06 CEN-U07 MAXIMUM RATINGS: (T =25C) SYMBOL CEN-U55 CEN-U56 CEN-U57 UNITS C Collector-Base Voltage V 60 80 100 V CBO Collector-Emitter Voltage V 60 80 100 V CEO Emitter-Base Voltage V 4.0 V EBO Continuous Collector Current I 2.0 A C Power Dissipation P 10 W D Power Dissipation (T=25C) P 1.75 W A D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 71.4 C/W JA Thermal Resistance 12.5 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 0.1 A CBO CB CBO I V=4.0V 100 A EBO EB BV I =1.0mA (CEN-U05, CEN-U55) 60 V CEO C BV I =1.0mA (CEN-U06, CEN-U56) 80 V CEO C BV I =1.0mA (CEN-U07, CEN-U57) 100 V CEO C V I =250mA, I=10mA 0.5 V CE(SAT) C B V I =250mA, I=25mA 0.35 V CE(SAT) C B V V =1.0V, I=250mA 1.2 V BE(ON) CE C h V =1.0V, I=50mA 80 FE CE C h V =1.0V, I=250mA 50 FE CE C h V =1.0V, I=500mA 20 FE CE C f V =5.0V, I =200mA, f=100MHz 50 MHz T CE C C V =10V, I =0, f=1.0MHz 30 pF ob CB E R2 (20-January 2012)CEN-U05 CEN-U06 CEN-U07 NPN CEN-U55 CEN-U56 CEN-U57 PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector Tab is common to pin 3 MARKING: FULL PART NUMBER R2 (20-January 2012) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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