CEN-U10 www.centralsemi.com NPN SILICON DESCRIPTION: POWER TRANSISTOR The CENTRAL SEMICONDUCTOR CEN-U10 type is an NPN silicon power transistor designed for high voltage amplifier applications. This device is an electrical equivalent to Motorolas MPSU10. MARKING: FULL PART NUMBER TO-202 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 300 V CBO Collector-Emitter Voltage V 300 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 0.5 A C Power Dissipation P 1.75 W D Power Dissipation (T=25C) P 10 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 70 C/W JA Thermal Resistance 12.5 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=200V 200 nA CBO CB I V=6.0V 100 nA EBO EB BV l=100A 300 V CBO C BV l=1.0mA 300 V CEO C BV l=100A 6.0 V EBO E V l =20mA, I=2.0mA 1.5 V CE(SAT) C B V l =20mA, I=2.0mA 0.8 V BE(SAT) C B h V =10V, I=1.0mA 25 FE CE C h V =10V, I=10mA 40 FE CE C h V =10V, l=30mA 40 FE CE C f V =20V, l =10mA, f=100MHz 45 MHz T CE C C V =20V, I =0, f=1.0MHz 3.0 pF ob CB E R2 (23-January 2012)CEN-U10 NPN SILICON POWER TRANSISTOR TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector Tab is common to pin 3 MARKING: FULL PART NUMBER R2 (23-January 2012) www.centralsemi.com