CET3904E NPN
CET3906E PNP
www.centralsemi.com
ENHANCED SPECIFICATION
DESCRIPTION:
SURFACE MOUNT SILICON
The CENTRAL SEMICONDUCTOR CET3904E
COMPLEMENTARY TRANSISTORS
and CET3906E Low V NPN and PNP
CE(SAT)
transistors, respectively, are designed for applications
where ultra small size and power dissipation are
the prime requirements. Packaged in an SOT-883L
surface mount package, these components provide
performance characteristics suitable for the most
demanding size constrained applications.
MARKING CODES: CET3904E: C
CET3906E: D
SOT-883L CASE
FEATURES:
APPLICATIONS:
Device is Halogen Free by design
DC-DC converters
250mW power dissipation
Battery powered devices including cell phones
Low V 0.1V TYP @ 50mA
and digital cameras
CE(SAT)
Small, TLP 1x0.4mm, SOT-883L leadless,
low profile, surface mount package
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Collector-Base Voltage V 60 V
CBO
Collector-Emitter Voltage V 40 V
CEO
Emitter-Base Voltage V 6.0 V
EBO
Continuous Collector Current I 200 mA
C
Power Dissipation (Note 1) P 250 mW
D
Power Dissipation (Note 2) P 430 mW
D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance (Note 1) 500 C/W
JA
Thermal Resistance (Note 2) 290 C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25C) NPN PNP
A
SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS
I V =30V, V=3.0V 50 nA
CEV CE EB
BV I =10A 60 115 90 V
CBO C
BV I=1.0mA 40 60 55 V
CEO C
BV I=10A 6.0 7.5 7.9 V
EBO E
V I =10mA, I=1.0mA 0.057 0.050 0.100 V
CE(SAT) C B
V ) I =50mA, I=5.0mA 0.100 0.100 0.200 V
CE(SAT C B
V I =10mA, I =1.0mA 0.65 0.75 0.75 0.85 V
BE(SAT) C B
V I =50mA, I=5.0mA 0.85 0.85 0.95 V
BE(SAT) C B
Enhanced specification
Notes: 1) FR-4 epoxy PC board, standard mounting conditions.
2
2) FR-4 epoxy PC board with collector mounting pad area of 1 cm .
R3 (25-September 2018)CET3904E NPN
CET3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (T =25C) NPN PNP
A
SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS
h V =1.0V, I =0.1mA 90 240 130
FE CE C
h V =1.0V, I =1.0mA 100 235 150
FE CE C
h V =1.0V, I=10mA 100 215 150 300
FE CE C
h V =1.0V, I=50mA 70 110 120
FE CE C
h V =1.0V, I =100mA 30 50 55
FE CE C
f V =20V, I =10mA, f=100MHz 300 MHz
T CE C
C V =5.0V, I =0, f=1.0MHz 4.0 pF
ob CB E
C V =0.5V, I =0, f=1.0MHz 12 pF
ib BE C
h V =10V, I =1.0mA, f=1.0kHz 1.0 12 k
ie CE C
-4
h V =10V, I =1.0mA, f=1.0kHz 0.1 10 x10
re CE C
h V =10V, I=1.0mA, f=1.0kHz 100 400
fe CE C
h V =10V, I =1.0mA, f=1.0kHz 1.0 60 S
oe CE C
NF V =5.0V, I =100A, R=1.0K, 4.0 dB
CE C S
f=10Hz to 15.7kHz
t V =3.0V, V =0.5V, I =10mA, I=1.0mA 35 ns
d CC BE C B1
t V =3.0V, V =0.5V, I =10mA, I=1.0mA 35 ns
r CC BE C B1
t V =3.0V, I =10mA, I =I=1.0mA 200 ns
s CC C B1 B2
t V =3.0V, I =10mA, I =I =1.0mA 50 ns
f CC C B1 B2
Enhanced specification
SOT-883L CASE - MECHANICAL OUTLINE
LEAD CODE: MARKING CODES:
1) Base CET3904E: C
2) Emitter CET3906E: D
3) Collector
R3 (25-September 2018)
www.centralsemi.com