CJD200 NPN CJD210 PNP www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CJD200 and POWER TRANSISTORS CJD210 are complementary silicon power transistors manufactured in a surface mount package designed for high current amplifier applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) C SYMBOL UNITS Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage V 8.0 V EBO Continuous Collector Current I 5.0 A C Peak Collector Current I 10 A CM Continuous Base Current I 1.0 A B Power Dissipation P 12.5 W D Power Dissipation (T=25C) P 1.4 W A D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 10 C/W JC Thermal Resistance 89.3 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V=40V 100 nA CBO CB I V =40V, T=125C 100 A CBO CB C I V=8.0V 100 nA EBO EB BV I=10mA 25 V CEO C V I =500mA, I =50mA 0.3 V CE(SAT) C B V I =2.0A, I =200mA 0.75 V CE(SAT) C B V I =5.0A, I =1.0A 1.8 V CE(SAT) C B V I =5.0A, I =1.0A 2.5 V BE(SAT) C B V V =1.0V, I =2.0A 1.6 V BE(ON) CE C h V =1.0V, I=500mA 70 FE CE C h V =1.0V, I=2.0A 45 180 FE CE C h V =2.0V, I=5.0A 10 FE CE C f V =10V, I =100mA, f=10MHz 65 MHz T CE C C V =10V, I =0, f=0.1MHz (CJD200) 80 pF ob CB E C V =10V, I =0, f=0.1MHz (CJD210) 120 pF ob CB E R3 (21-January 2013)CJD200 NPN CJD210 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R3 (21-January 2013) www.centralsemi.com