X-On Electronics has gained recognition as a prominent supplier of CMKT3946 TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CMKT3946 TR Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

CMKT3946 TR Central Semiconductor

CMKT3946 TR electronic component of Central Semiconductor
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Part No.CMKT3946 TR
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Central Semiconductor Bipolar Transistors - BJT Dual - NPNPNP Switching
Datasheet: CMKT3946 TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3531 ea
Line Total: USD 0.35 
Availability - 5964
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5964
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3531
10 : USD 0.2673
100 : USD 0.2134
500 : USD 0.1914
1000 : USD 0.1804
3000 : USD 0.1485
9000 : USD 0.1441
45000 : USD 0.1397

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CMKT3946 TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMKT3946 TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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CMKT3946 NPN/PNP SURFACE MOUNT SILICON www.centralsemi.com DUAL, COMPLEMENTARY DESCRIPTION: SMALL SIGNAL The CENTRAL SEMICONDUCTOR CMKT3946 SWITCHING TRANSISTOR (one each NPN and PNP) are silicon complementary transistors in a space saving SOT-363 package, designed for small signal general purpose amplifier and switching applications. MARKING CODE: K46 SOT-363 CASE FEATURES: One NPN (3904) and one PNP (3906) complementary Transistor in a single package MAXIMUM RATINGS: (T =25C) SYMBOL NPN PNP UNITS A Collector-Base Voltage V 60 40 V CBO Collector-Emitter Voltage V 40 40 V CEO Emitter-Base Voltage V 6.0 5.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C unless otherwise noted) A NPN PNP SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =30V, V=3.0V - 50 - 50 nA CEV CE EB I V =30V, V=3.0V - 50 - - nA BL CE EB BV I=10A 60 - 40 - V CBO C BV I=1.0mA 40 - 40 - V CEO C BV I=10A 6.0 - 5.0 - V EBO E V I =10mA, I=1.0mA - 0.20 - 0.25 V CE(SAT) C B V I =50mA, I=5.0mA - 0.30 - 0.40 V CE(SAT) C B V I =10mA, I=1.0mA 0.65 0.85 0.65 0.85 V BE(SAT) C B V I =50mA, I=5.0mA - 0.95 - 0.95 V BE(SAT) C B h V =1.0V, I=0.1mA 40 - 60 - FE CE C h V =1.0V, I=1.0mA 70 - 80 - FE CE C h V =1.0V, I=10mA 100 300 100 300 FE CE C h V =1.0V, I=50mA 60 - 60 - FE CE C h V =1.0V, I=100mA 30 - 30 - FE CE C f V =20V, I =10mA, f=100MHz 300 - 250 - MHz T CE C C V =5.0V, I =0, f=1.0MHz - 4.0 - 4.5 pF ob CB E C V =0.5V, I =0, f=1.0MHz - 8.0 - 10 pF ib BE C R6 (23-September 2013)CMKT3946 NPN/PNP SURFACE MOUNT SILICON DUAL, COMPLEMENTARY SMALL SIGNAL SWITCHING TRANSISTOR ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25C) A NPN PNP SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS h V =10V, I =1.0mA, f=1.0kHz 1.0 10 2.0 12 k ie CE C -4 h V =10V, I =1.0mA, f=1.0kHz 0.5 8.0 0.1 10 x10 re CE C h V =10V, I =1.0mA, f=1.0kHz 100 400 100 400 fe CE C h V =10V, I =1.0mA, f=1.0kHz 1.0 40 3.0 60 S oe CE C NF V =5.0V, I =100A, R =1.0k, f=10Hz to 15.7kHz - 5.0 - 4.0 dB CE C S t V =3.0V, V =0.5V, I =10mA, I=1.0mA - 35 - 35 ns d CC C B1 BE t V =3.0V, V =0.5V, I =10mA, I=1.0mA - 35 - 35 ns r CC C B1 BE t V =3.0V, I =10mA, I =I=1.0mA - 200 - 225 ns s CC B1 B2 C t V =3.0V, I =10mA, I =I=1.0mA - 50 - 75 ns f CC B1 B2 C SOT-363 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODES: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: K46 R6 (23-September 2013) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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