CMKT5089M10 www.centralsemi.com SURFACE MOUNT DUAL NPN SILICON DESCRIPTION: MATCHED h TRANSISTORS The CENTRAL SEMICONDUCTOR CMKT5089M10 FE consists of two (2) individually isolated 5089 NPN silicon transistors with matched h . This FE ULTRAminidevice is manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. The CMKT5089M10 has been designed for applications requiring high gain and low noise. MARKING CODE: C9M0 SOT-363 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 30 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage V 4.5 V EBO Continuous Collector Current I 50 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=15V 50 nA CBO CB I V=4.5V 100 nA EBO EB BV I=100A 30 V CBO C BV I=1.0mA 25 V CEO C BV I=100A 4.5 V EBO E V I =10mA, I=1.0mA 0.5 V CE(SAT) C B V I =10mA, I=1.0mA 0.8 V BE(SAT) C B h V =5.0V, I=0.1mA 400 1200 FE CE C h V =5.0V, I=1.0mA 450 FE CE C h V =5.0V, I=10mA 400 FE CE C f V =5.0V, I =500A, f=20MHz 50 MHz T CE C C V =5.0V, I =0, f=1.0MHz 4.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 10 pF ib BE C h V =5.0V, I =1.0mA, f=1.0kHz 450 1800 fe CE C NF V =5.0V, I =100A, R=1.0k, CE C S f=10Hz to 15.7kHz 2.0 dB MATCHING CHARACTERISTICS: SYMBOL TEST CONDITIONS MIN MAX UNITS h /h * V =5.0V, I=1.0mA 0.9 1.0 FE1 FE2 CE C V -V V =5.0V, I=100A 5.0 mV BE1 BE2 CE C * The lowest h reading is taken as h . FE FE1 R4 (13-January 2010)CMKT5089M10 SURFACE MOUNT DUAL NPN SILICON MATCHED h TRANSISTORS FE SOT-363 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: C9M0 R4 (13-January 2010) www.centralsemi.com