CMLT2207G
www.centralsemi.com
SURFACE MOUNT SILICON
DUAL, COMPLEMENTARY
DESCRIPTION:
TRANSISTOR
The CENTRAL SEMICONDUCTOR CMLT2207G
consists of one isolated 2N2222A NPN transistor and
one complementary isolated 2N2907A PNP transistor,
manufactured by the epitaxial planar process and
epoxy molded in an SOT-563 surface mount package.
This device has been designed for small signal general
purpose amplifier and switching applications.
MARKING CODE: L7G
SOT-563 CASE
Device is Halogen Free by design
MAXIMUM RATINGS: (T =25C) SYMBOL NPN (Q1) PNP (Q2) UNITS
A
Collector-Base Voltage V 75 60 V
CBO
Collector-Emitter Voltage V 40 60 V
CEO
Emitter-Base Voltage V 6.0 5.0 V
EBO
Continuous Collector Current I 600 mA
C
Power Dissipation P 350 mW
D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance 357 C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
NPN (Q1) PNP (Q2)
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I V=60V - 10 - - nA
CBO CB
I V=50V - - - 10 nA
CBO CB
I V =60V, T=125C - 10 - - nA
CBO CB A
I V =50V, T=125C - - - 10 nA
CBO CB A
I V =60V, V =3.0V - 10 - - nA
CEV CE EB(OFF)
I V =30V, V =500mV - - - 50 nA
CEV CE EB(OFF)
I V=3.0V - 10 - - nA
EBO EB
BV I=10A 75 - 60 - V
CBO C
BV I=10mA 40 - 60 - V
CEO C
BV I=10A 6.0 - 5.0 - V
EBO E
V I =150mA, I=15mA - 0.3 - 0.4 V
CE(SAT) C B
V I =500mA, I=50mA - 1.0 - 1.6 V
CE(SAT) C B
V I =150mA, I=15mA 0.6 1.2 - 1.3 V
BE(SAT) C B
V I =500mA, I=50mA - 2.0 - 2.6 V
BE(SAT) C B
h V =10V, I=0.1mA 35 - 75 -
FE CE C
h V =10V, I=1.0mA 50 - 100 -
FE CE C
h V =10V, I=10mA 75 - 100 -
FE CE C
h V =10V, I=150mA 100 300 100 300
FE CE C
h V =1.0V, I=150mA 50 - - -
FE CE C
h V =10V, I=500mA 40 - 50 -
FE CE C
R5 (29-June 2015)CMLT2207G
SURFACE MOUNT SILICON
DUAL, COMPLEMENTARY
TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: NPN (Q1) PNP (Q2)
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
f V =20V, I =20mA, f=100MHz 300 - - - MHz
T CE C
f V =20V, I =50mA, f=100MHz - - 200 - MHz
T CE C
C V =10V, I =0, f=1.0MHz - 8.0 - 8.0 pF
ob CB E
C V =0.5V, I =0, f=1.0MHz - 25 - - pF
ib EB C
C V =2.0V, I =0, f=1.0MHz - - - 30 pF
ib EB C
h V =10V, I =1.0mA, f=1.0kHz 2.0 8.0 - - k
ie CE C
h V =10V, I =10mA, f=1.0kHz 0.25 1.25 - - k
ie CE C
h V =10V, I =1.0mA, f=1.0kHz - 8.0 - - x10-4
re CE C
h V =10V, I =10mA, f=1.0kHz - 4.0 - - x10-4
re CE C
h V =10V, I =1.0mA, f=1.0kHz 50 300 - -
fe CE C
h V =10V, I =10mA, f=1.0kHz 75 375 - -
fe CE C
h V =10V, I =1.0mA, f=1.0kHz 5.0 35 - - S
oe CE C
h V =10V, I =10mA, f=1.0kHz 25 200 - - S
oe CE C
rbC V =10V, I =20mA, f=31.8MHz - 150 - - ps
c CB E
NF V =10V, I =100A, R =1.0k, f=1.0kHz - 4.0 - - dB
CE C S
t V =30V, V =0.5V, I =150mA, I=15mA - - - 45 ns
on CC BE C B1
t V =30V, V =0.5V, I =150mA, I=15mA - 10 - 10 ns
d CC BE C B1
t V =30V, V =0.5V, I =150mA, I=15mA - 25 - 40 ns
r CC BE C B1
t V =6.0V, I =150mA, I =I=15mA - - - 100 ns
off CC C B1 B2
t V =30V, I =150mA, I =I=15mA - 225 - - ns
s CC C B1 B2
t V =6.0V, I =150mA, I =I=15mA - - - 80 ns
s CC C B1 B2
t V =30V, I =150mA, I =I=15mA - 60 - - ns
f CC C B1 B2
t V =6.0V, I =150mA, I =I=15mA - - - 30 ns
f CC C B1 B2
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE: MARKING CODE: L7G
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
R5 (29-June 2015)
www.centralsemi.com