CMLT3820G www.centralsemi.com SURFACE MOUNT SILICON VERY LOW V DESCRIPTION: CE(SAT) The CENTRAL SEMICONDUCTOR CMLT3820G is NPN TRANSISTOR a very low V NPN Transistor, designed for CE(SAT) applications where small size and efficiency are the prime requirements. Packaged in a space saving SOT-563 surface mount package, this component provides performance characteristics suitable for the most demanding size constrained applications. MARKING CODE: 38G SOT-563 CASE FEATURES: APPLICATIONS: Device is Halogen Free by design DC/DC Converters Voltage Clamping High Current (I =1.0A) C V =0.28V MAX Protection Circuits I =1.0A CE(SAT) C Battery powered Cell Phones, Pagers, SOT563 surface mount package Digital Cameras, PDAs, Laptops, etc. Complementary PNP device CMLT7820G MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 80 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 1.0 A C Peak Collector Current I 2.0 A CM Continuous Base Current I 300 mA B Power Dissipation P 250 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 500 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=60V 100 nA CBO CB I V=5.0V 100 nA EBO EB BV I=100A 80 V CBO C BV I=10mA 60 V CEO C BV I=100A 5.0 V EBO E V I =100mA, I=1.0mA 0.115 V CE(SAT) C B V I =500mA, I=50mA 0.15 V CE(SAT) C B V I =1.0A, I=100mA 0.28 V CE(SAT) C B V I =1.0A, I=50mA 1.1 V BE(SAT) C B V V =5.0V, I=1.0A 0.9 V BE(ON) CE C h V =5.0V, I=1.0mA 200 FE CE C h V =5.0V, I=500mA 200 FE CE C h V =5.0V, I=1.0A 100 FE CE C f V =10V, I=50mA 150 MHz T CE C C V =10V, I =0, f=1.0MHz 10 pF ob CB E R4 (29-June 2015)CMLT3820G SURFACE MOUNT SILICON VERY LOW V CE(SAT) NPN TRANSISTOR SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Collector 2) Collector 3) Base 4) Emitter 5) Collector 6) Collector Pins 1, 2, 5 and 6 are common. MARKING CODE: 38G R4 (29-June 2015) www.centralsemi.com