CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
www.centralsemi.com
ENHANCED SPECIFICATION
DESCRIPTION:
SURFACE MOUNT SILICON
These CENTRAL SEMICONDUCTOR devices
COMPLEMENTARY TRANSISTORS
are combinations of dual, enhanced specification
transistors in a space saving SOT-563 package,
designed for small signal general purpose amplifier
and switching applications.
MARKING CODES: CMLT3904E: L04
CMLT3906E: L06
CMLT3946E: L46
CMLT3904EG*: C4G
SOT-563 CASE
CMLT3906EG*: C6G
CMLT3946EG*: 46G
* Device is Halogen Free by design
ENHANCED SPECIFICATIONS: h from 60 MIN to 70 MIN (NPN/PNP)
FE
BV from 40V MIN to 60V MIN (PNP) V from 0.3V MAX to 0.2V MAX (NPN)
CE(SAT)
CBO
from 0.4V MAX to 0.2V MAX (PNP)
BV from 5.0V MIN to 6.0V MIN (PNP)
EBO
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Collector-Base Voltage V 60 V
CBO
Collector-Emitter Voltage V 40 V
CEO
Emitter-Base Voltage V 6.0 V
EBO
Continuous Collector Current I 200 mA
C
Power Dissipation (Note 1) P 350 mW
D
Power Dissipation (Note 2) P 300 mW
D
Power Dissipation (Note 3) P 150 mW
D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance 357 C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
NPN PNP
SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS
I V =30V, V=3.0V - - - 50 nA
CEV CE EB
BV I=10A 60 115 90 - V
CBO C
BV I=1.0mA 40 60 55 - V
CEO C
BV I=10A 6.0 7.5 7.9 - V
EBO E
V I =10mA, I=1.0mA - 0.057 0.050 0.100 V
CE(SAT) C B
V I =50mA, I=5.0mA - 0.100 0.100 0.200 V
CE(SAT) C B
V I =10mA, I=1.0mA 0.65 0.75 0.75 0.85 V
BE(SAT) C B
V I =50mA, I=5.0mA - 0.85 0.85 0.95 V
BE(SAT) C B
h V =1.0V, I=0.1mA 90 240 130 -
FE CE C
h V =1.0V, I=1.0mA 100 235 150 -
FE CE C
h V =1.0V, I=10mA 100 215 150 300
FE CE C
h V =1.0V, I=50mA 70 110 120 -
FE CE C
h V =1.0V, I=100mA 30 50 55 -
FE CE C
Enhanced Specification
2
Notes: 1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
2
2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
2
3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
R8 (21-September 2018) CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25C)
A
SYMBOL TEST CONDITIONS MIN MAX UNITS
f V =20V, I =10mA, f=100MHz 300 MHz
T CE C
C V =5.0V, I =0, f=1.0MHz 4.0 pF
ob CB E
C V =0.5V, I =0, f=1.0MHz 12 pF
ib BE C
h V =10V, I =1.0mA, f=1.0kHz 1.0 12 k
ie CE C
-4
h V =10V, I =1.0mA, f=1.0kHz 0.1 10 x10
re CE C
h V =10V, I =1.0mA, f=1.0kHz 100 400
fe CE C
h V =10V, I =1.0mA, f=1.0kHz 1.0 60 S
oe CE C
NF V =5.0V, I =100A, R =1.0k
CE C S
f=10Hz to 15.7kHz 4.0 dB
t V =3.0V, V =0.5V, I =10mA, I=1.0mA 35 ns
d CC BE C B1
t V =3.0V, V =0.5V, I =10mA, I=1.0mA 35 ns
r CC BE C B1
t V =3.0V, I =10mA, I =I=1.0mA 200 ns
s CC C B1 B2
t V =3.0V, I =10mA, I =I =1.0mA 50 ns
f CC C B1 B2
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
6 5 4 6 5 4
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
1 2 3 1 2 3
CMLT3904E CMLT3906E CMLT3946E
CMLT3904EG* CMLT3906EG* CMLT3946EG*
* Device is Halogen Free by design
R8 (21-September 2018)
www.centralsemi.com