CMLT5088EM www.centralsemi.com SURFACE MOUNT DUAL, MATCHED DESCRIPTION: NPN SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR CMLT5088EM consists of two individual, isolated 5088E NPN silicon transistors with matched V characteristics. BE(ON) This device is designed for applications requiring high gain and low noise. MARKING CODE: 88M FEATURES: SOT-563 CASE Transistor pair matched for V BE(ON) Device is Halogen Free by design MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 100 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=20V 50 nA CBO CB I V=3.0V 50 nA EBO EB BV I=100A 50 135 V CBO C BV I=1.0mA 50 65 V CEO C BV I=100A 5.0 8.7 V EBO E V I =10mA, I=1.0mA 45 100 mV CE(SAT) C B V I =100mA, I=10mA 110 400 mV CE(SAT) C B V I =10mA, I=1.0mA 700 800 mV BE(SAT) C B h V =5.0V, I=0.1mA 300 430 900 FE CE C h V =5.0V, I=1.0mA 300 435 FE CE C h V =5.0V, I=10mA 300 430 FE CE C h V =5.0V, I=100mA 50 125 FE CE C f V =5.0V, I =500A, f=20MHz 100 MHz T CE C C V =5.0V, I =0, f=1.0MHz 4.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 15 pF ib BE C h V =5.0V, I =1.0mA, f=1.0kHz 350 1400 fe CE C NF V =5.0V, I =100A, R =10k CE C S f=10Hz to 15.7kHz 3.0 dB MATCHING CHARACTERISTICS: SYMBOL TEST CONDITIONS MIN MAX UNITS V -V V =5.0V, I=1.0A 10 mV BE1 BE2 CE C V -V V =5.0V, I=5.0A 10 mV BE1 BE2 CE C V -V V =5.0V, I=10A 10 mV BE1 BE2 CE C V -V V =5.0V, I=100A 10 mV BE1 BE2 CE C R1 (20-January 2010)CMLT5088EM SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: 88M R1 (20-January 2010) www.centralsemi.com