CMLT5551 www.centralsemi.com SURFACE MOUNT SILICON DUAL, HIGH VOLTAGE DESCRIPTION: NPN TRANSISTOR The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors manufactured by the epitaxial planar process and epoxy molded in an SOT-563 suface mount package. This device has been designed for high voltage amplifier applications. MARKING CODE: 5C5 SOT-563 CASE O MAXIMUM RATINGS: (T =25 C) SYMBOL UNITS A Collector-Base Voltage V 180 V CBO Collector-Emitter Voltage V 160 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 350 mW D O Operating and Storage Junction Temperature T , T -65 to +150 C J stg O Thermal Resistance 357 C/W JA O ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25 C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=120V 50 nA CBO CB I V =120V, T=100C 50 A CBO CB A BV I=100A 180 V CBO C BV I=1.0mA 160 V CEO C BV I=10A 6.0 V EBO E V I =10mA, I=1.0mA 0.15 V CE(SAT) C B V I =50mA, I=5.0mA 0.20 V CE(SAT) C B V I =10mA, I=1.0mA 1.00 V BE(SAT) C B V I =50mA, I=5.0mA 1.00 V BE(SAT) C B h V =5.0V, I=1.0mA 80 FE CE C h V =5.0V, I=10mA 80 250 FE CE C h V =5.0V, I=50mA 30 FE CE C f V =10V, I =10mA, f=100MHz 100 300 MHz T CE C C V =10V, I =0, f=1.0MHz 6.0 pF ob CB E h V =10V, I =1.0mA, f=1.0kHz 50 200 fe CE C NF V =5.0V, I =200A, R =10, CE C S f=10Hz to 15.7kHz 8.0 dB R3 (29-June 2015)CMLT5551 SURFACE MOUNT SILICON DUAL, HIGH VOLTAGE NPN TRANSISTOR SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: 5C5 R3 (29-June 2015) www.centralsemi.com