X-On Electronics has gained recognition as a prominent supplier of CMPT2222A TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CMPT2222A TR Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

CMPT2222A TR Central Semiconductor

CMPT2222A TR electronic component of Central Semiconductor
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Part No.CMPT2222A TR
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN Gen Purpose
Datasheet: CMPT2222A TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8272 ea
Line Total: USD 0.83 
Availability - 25065
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
25065
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8272
10 : USD 0.6072
100 : USD 0.4367
500 : USD 0.3586
1000 : USD 0.3322
3000 : USD 0.3014
6000 : USD 0.2981
9000 : USD 0.297
24000 : USD 0.2959

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
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We are delighted to provide the CMPT2222A TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMPT2222A TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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CMPT2222A www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general purpose and switching applications. MARKING CODE: C1P SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 75 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=60V 10 nA CBO CB I V =60V, T=125C 10 A CBO CB A I V =60V, V=3.0V 10 nA CEV CE EB I V=3.0V 10 nA EBO EB BV I=10A 75 V CBO C BV I=10mA 40 V CEO C BV I=10A 6.0 V EBO E V I =150mA, I=15mA 0.3 V CE(SAT) C B V I =500mA, I=50mA 1.0 V CE(SAT) C B V I =150mA, I=15mA 0.6 1.2 V BE(SAT) C B V I =500mA, I=50mA 2.0 V BE(SAT) C B h V =10V, I=0.1mA 35 FE CE C h V =10V, I=1.0mA 50 FE CE C h V =10V, I=10mA 75 FE CE C h V =1.0V, I =150mA 50 FE CE C h V =10V, I=150mA 100 300 FE CE C h V =10V, I=500mA 40 FE CE C f V =20V, I =20mA, f=100MHz 300 MHz T CE C C V =10V, I =0, f=1.0MHz 8.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 25 pF ib BE C R5 (1-February 2010)CMPT2222A SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS h V =10V, I =1.0mA, f=1.0kHz 2.0 8.0 k ie CE C h V =10V, I =10mA, f=1.0kHz 0.25 1.25 k ie CE C -4 h V =10V, I =1.0mA, f=1.0kHz 8.0 X10 re CE C -4 h V =10V, I =10mA, f=1.0kHz 4.0 X10 re CE C h V =10V, I =1.0mA, f=1.0kHz 50 300 fe CE C h V =10V, I =10mA, f=1.0kHz 75 375 fe CE C h V =10V, I =1.0mA, f=1.0kHz 5.0 35 S oe CE C h V =10V, I =10mA, f=1.0kHz 25 200 S oe CE C rbC V =10V, I =20mA, f=31.8MHz 150 ps c CB E NF V =10V,I =100A, R =1.0K, f=1.0kHz 4.0 dB CE C S t V =30V, V =0.5V, I =150mA, I=15mA 10 ns d CC BE C B1 t V =30V, V =0.5V, I =150mA, I=15mA 25 ns r CC BE C B1 t V =30V, I =150mA, I =I=15mA 225 ns s CC C B1 B2 t V =30V, I =150mA, I =I=15mA 60 ns f CC C B1 B2 SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C1P R5 (1-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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