X-On Electronics has gained recognition as a prominent supplier of CMPT2907AE TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CMPT2907AE TR Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

CMPT2907AE TR Central Semiconductor

CMPT2907AE TR electronic component of Central Semiconductor
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Part No.CMPT2907AE TR
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP Enhanced
Datasheet: CMPT2907AE TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2321 ea
Line Total: USD 0.23 
Availability - 9321
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9321
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2321
10 : USD 0.1573
100 : USD 0.0814
1000 : USD 0.0748
3000 : USD 0.0594
9000 : USD 0.0517
24000 : USD 0.0517
45000 : USD 0.0495

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the CMPT2907AE TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMPT2907AE TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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CMPT2907AE www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT2907AE is an Enhanced version of the CMPT2907A PNP Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. MARKING CODE: C2FE FEATURED ENHANCED SPECIFICATIONS: BV from 60V min to 90V min. (115V TYP) CBO SOT-23 CASE V from 1.6V max to 0.7V max. (0.280V TYP) CE(SAT) h from 50 min to 75 min. (110 TYP) FE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 90 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=50V 10 nA CBO CB I V =50V, T=125C 10 A CBO CB A I V =30V, V=0.5V 50 nA CEV CE EB BV I=10A 90 115 V CBO C BV I=10mA 60 V CEO C BV I=10A 5.0 V EBO E V I =150mA, I=15mA 0.103 0.2 V CE(SAT) C B V I =500mA, I=50mA 0.280 0.7 V CE(SAT) C B V I =150mA, I=15mA 1.3 V BE(SAT) C B V I =500mA, I=50mA 2.6 V BE(SAT) C B h V =10V, I=0.1mA 100 205 FE CE C h V =10V, I=1.0mA 100 FE CE C h V =10V, I=10mA 100 FE CE C h V =10V, I=150mA 100 300 FE CE C h V =10V, I=500mA 75 110 FE CE C f V =20V, I =50mA, f=100MHz 200 MHz T CE C C V =10V, I =0, f=1.0MHz 8.0 pF ob CB E C V =2.0V, I =0, f=1.0MHz 30 pF ib BE C Enhanced specification R2 (1-February 2010)CMPT2907AE ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MAX UNITS t V =30V, V =0.5V, I =150mA, I=15mA 45 ns on CC BE C B1 t V =30V, V =0.5V, I =150mA, I=15mA 10 ns d CC BE C B1 t V =30V, V =0.5V, I =150mA, I=15mA 40 ns r CC BE C B1 t V =6.0V, I =150mA, I =I =15mA 100 ns off CC C B1 B2 t V =6.0V, I =150mA, I =I=15mA 80 ns s CC C B1 B2 t V =6.0V, I =150mA, I =I=15mA 30 ns f CC C B1 B2 SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C2FE R2 (1-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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