CMPT3646 www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching applications. MARKING CODE: C2R SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 40 V CES Collector-Emitter Voltage V 15 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=20V 0.5 A CES CE I V =20V, T=65C 3.0 A CES CE A BV I=100A 40 V CBO C BV I=10A 40 V CES C BV I=10mA 15 V CEO C BV I=100A 5.0 V EBO E V I =30mA, I=3.0mA 0.20 V CE(SAT) C B V I =30mA, I =3.0mA, T=65C 0.30 V CE(SAT) C B A V I =100mA, I=10mA 0.28 V CE(SAT) C B V I =300mA, I=30mA 0.50 V CE(SAT) C B V I =30mA, I=3.0mA 0.75 0.95 V BE(SAT) C B V I =100mA, I=10mA 1.20 V BE(SAT) C B V I =300mA, I=30mA 1.70 V BE(SAT) C B h V =0.4V, I=30mA 30 120 FE CE C h V =0.5V, I=100mA 25 FE CE C h V =1.0V, I=300mA 15 FE CE C R3 (1-February 2010)CMPT3646 SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS f V =10V, I =30mA, f=100MHz 350 MHz T CE C C V =5.0V, I =0, f=1.0MHz 5.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 8.0 pF ib BE C t V =10V, I =300mA, I=30mA 18 ns on CC C B1 t V =10V, I =300mA, I =I=30mA 28 ns off CC C B1 B2 t V =10V, I =I =I=10mA 18 ns s CC C B1 B2 SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C2R R3 (1-February 2010) www.centralsemi.com