X-On Electronics has gained recognition as a prominent supplier of CMPT3904G TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CMPT3904G TR Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

CMPT3904G TR Central Semiconductor

CMPT3904G TR electronic component of Central Semiconductor
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Part No.CMPT3904G TR
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN Gen Purpose
Datasheet: CMPT3904G TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5852 ea
Line Total: USD 0.59 
Availability - 46455
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
46455
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5852
10 : USD 0.4664
100 : USD 0.3168
500 : USD 0.2497
1000 : USD 0.22
3000 : USD 0.1716
9000 : USD 0.1705
45000 : USD 0.1683

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CMPT3904G TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMPT3904G TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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CMPT3904 CMPT3904G* NPN CMPT3906 CMPT3906G* PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION: COMPLEMENTARY These CENTRAL SEMICONDUCTOR devices are SILICON TRANSISTORS complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications. MARKING CODES: CMPT3904: C1A CMPT3906: C2A CMPT3904G*: CG1 SOT-23 CASE CMPT3906G*: CG2 Device is Halogen Free by design * CMPT3904 CMPT3906 MAXIMUM RATINGS: (T =25C) SYMBOL CMPT3904G* CMPT3906G* UNITS A Collector-Base Voltage V 60 40 V CBO Collector-Emitter Voltage V 40 40 V CEO Emitter-Base Voltage V 6.0 5.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA CMPT3904 CMPT3906 ELECTRICAL CHARACTERISTICS: (T =25C) CMPT3904G* CMPT3906G* A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =30V, V=3.0V - 50 - 50 nA CEV CE EB I V =30V, V=3.0V - 50 - 50 nA BL CE EB BV I=10A 60 - 40 - V CBO C BV I=1.0mA 40 - 40 - V CEO C BV I=10A 6.0 - 5.0 - V EBO E V I =10mA, I=1.0mA - 0.20 - 0.25 V CE(SAT) C B V I =50mA, I=5.0mA - 0.30 - 0.40 V CE(SAT) C B V I =10mA, I=1.0mA 0.65 0.85 0.65 0.85 V BE(SAT) C B V I =50mA, I=5.0mA - 0.95 - 0.95 V BE(SAT) C B h V =1.0V, I=0.1mA 40 - 60 - FE CE C h V =1.0V, I=1.0mA 70 - 80 - FE CE C h V =1.0V, I=10mA 100 300 100 300 FE CE C h V =1.0V, I=50mA 60 - 60 - FE CE C h V =1.0V, I=100mA 30 - 30 - FE CE C R7 (1-February 2010)CMPT3904 CMPT3904G* NPN CMPT3906 CMPT3906G* PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS CMPT3904 CMPT3906 ELECTRICAL CHARACTERISTICS - Continued: (T =25C) CMPT3904G* CMPT3906G* A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS f V =20V, I =10mA, f=100MHz 300 - 250 - MHz T CE C C V =5.0V, I =0, f=1.0MHz - 4.0 - 4.5 pF ob CB E C V =0.5V, I =0, f=1.0MHz - 8.0 - 10 pF ib BE C h V =10V, I =1.0mA, f=1.0kHz 1.0 10 2.0 12 k ie CE C -4 h V =10V, I =1.0mA, f=1.0kHz 0.5 8.0 0.1 10 x10 re CE C h V =10V, I =1.0mA, f=1.0kHz 100 400 100 400 fe CE C h V =10V, I =1.0mA, f=1.0kHz 1.0 40 3.0 60 S oe CE C NF V =5.0V, I =100A, R =1.0k, CE C S f=10Hz to 15.7kHz - 5.0 - 4.0 dB t V =3.0V, V =0.5, I =10mA, I=1.0mA - 35 - 35 ns d CC BE C B1 t V =3.0V, V =0.5, I =10mA, I=1.0mA - 35 - 35 ns r CC BE C B1 t V =3.0V, I =10mA, I =I=1.0mA - 200 - 225 ns s CC C B1 B2 t V =3.0V, I =10mA, I =I=1.0mA - 50 - 75 ns f CC C B1 B2 SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: MARKING CODES: 1) Base CMPT3904: C1A 2) Emitter CMPT3906: C2A 3) Collector CMPT3904G*: CG1 CMPT3906G*: CG2 Device is Halogen Free by design * R7 (1-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.
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