CMPT5086 CMPT5087 www.centralsemi.com SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5086 and CMPT5087 are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise. MARKING CODES: CMPT5086: C2P CMPT5087: C2Q SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage V 3.0 V EBO Continuous Collector Current I 50 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A CMPT5086 CMPT5087 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=10V - 10 - 10 nA CBO CB I V=35V - 50 - 50 nA CBO CB BV I=100A 50 - 50 - V CBO C BV I=1.0mA 50 - 50 - V CEO C BV I=100A 3.0 - 3.0 - V EBO E V I =10mA, I=1.0mA - 0.30 - 0.30 V CE(SAT) C B V I =10mA, I=1.0mA - 0.85 - 0.85 V BE(SAT) C B h V =5.0V, I=0.1mA 150 500 250 800 FE CE C h V =5.0V, I=1.0mA 150 - 250 - FE CE C h V =5.0V, I=10mA 150 - 250 - FE CE C f V =5.0V, I =500A, f=20MHz 40 - 40 - MHz T CE C C V =5.0V, I =0, f=1.0MHz - 4.0 - 4.0 pF ob CB E h V =5.0V, I =1.0mA, f=1.0kHz 150 600 250 900 fe CE C NF V =5.0V, I =20mA, R =10k, CE C S f=10Hz to 15.7kHz - 3.0 - 2.0 dB NF V =5.0V, I =100A, R =3.0k, f=1.0kHz - 3.0 - 2.0 dB CE C S R5 (1-February 2010)CMPT5086 CMPT5087 SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT5086: C2P CMPT5087: C2Q R5 (1-February 2010) www.centralsemi.com