CMPT5088 CMPT5089 www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5088 and CMPT5089 are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING CODES: CMPT5088: C1Q CMPT5089: C1R SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL CMPT5088 CMPT5089 UNITS A Collector-Base Voltage V 35 30 V CBO Collector-Emitter Voltage V 30 25 V CEO Emitter-Base Voltage V 4.5 V EBO Continuous Collector Current I 50 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A CMPT5088 CMPT5089 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=20V - 50 - - nA CBO CB I V=15V - - - 50 nA CBO CB I V=3.0V - 50 - - nA EBO EB I V=4.5V - - - 100 nA EBO EB BV I=100A 35 - 30 - V CBO C BV I=1.0mA 30 - 25 - V CEO C BV I=100A 4.5 - 4.5 - V EBO E V I =10mA, I=1.0mA - 0.5 - 0.5 V CE(SAT) C B V I =10mA, I=1.0mA - 0.8 - 0.8 V BE(SAT) C B h V =5.0V, I=0.1mA 300 900 400 1200 FE CE C h V =5.0V, I=1.0mA 350 - 450 - FE CE C h V =5.0V, I=10mA 300 - 400 - FE CE C f V =5.0V, I =500A, f=20MHz 50 - 50 - MHz T CE C C V =5.0V, I =0, f=1.0MHz - 4.0 - 4.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz - 15 - 15 pF ib BE C h V =5.0V, I =1.0mA, f=1.0kHz 350 1400 450 1800 fe CE C NF V =5.0V, I =100A, R =10k, CE C S f=10Hz to 15.7kHz - 3.0 - 2.0 dB R7 (9-September 2010)CMPT5088 CMPT5089 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT5088: C1Q CMPT5089: C1R R7 (9-September 2010) www.centralsemi.com