CMPT6428 CMPT6429 www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT6428 and CMPT6429 are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high gain amplifier applications. MARKING CODES: CMPT6428: C1K CMPT6429: C1L SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL CMPT6428 CMPT6429 UNITS A Collector-Base Voltage V 60 55 V CBO Collector-Emitter Voltage V 50 45 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A CMPT6428 CMPT6429 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=30V - 10 - 10 nA CBO CB I V=30V - 100 - 100 nA CEO CE I V=5.0V - 10 - 10 nA EBO BE BV I=100A 60 - 55 - V CBO C BV I=1.0mA 50 - 45 - V CEO C V I =10mA, I =0.5mA - 0.20 - 0.20 V CE(SAT) C B V I =100mA, I =5.0mA - 0.60 - 0.60 V CE(SAT) C B V V =5.0V, I=1.0mA 0.56 0.66 0.56 0.66 V BE(ON) CE C h V =5.0V, I=10A 250 - 500 - FE CE C h V =5.0V, I=100A 250 650 500 1250 FE CE C h V =5.0V, I=1.0mA 250 - 500 - FE CE C h V =5.0V, I=10mA 250 - 500 - FE CE C f V =5.0V, I =1.0mA, f=100MHz 100 700 100 700 MHz T CE C C V =10V, I =0, f=1.0MHz - 3.0 - 3.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz - 8.0 - 8.0 pF ib BE C R5 (1-February 2010)CMPT6428 CMPT6429 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT6428: C1K CMPT6429: C1L R5 (1-February 2010) www.centralsemi.com