CMPT8099 NPN CMPT8599 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT8099 and SILICON TRANSISTORS CMPT8599 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose audio amplifier applications. MARKING CODES: CMPT8099: CKB CMPT8599: C2W SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL CMPT8099 CMPT8599 UNITS A Collector-Base Voltage V 80 80 V CBO Collector-Emitter Voltage V 80 80 V CEO Emitter-Base Voltage V 6.0 5.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A CMPT8099 CMPT8599 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=80V 0.1 0.1 A CBO CB I V=6.0V 0.1 - A EBO BE I V=4.0V - 0.1 A EBO BE BV I=100A 80 80 V CBO C BV I=10mA 80 80 V CEO C BV I=10A 6.0 5.0 V EBO E V I =100mA, I=5.0mA 0.4 0.4 V CE(SAT) C B V I =100mA, I =10mA 0.3 0.3 V CE(SAT) C B V V =5.0V, I=10mA 0.6 0.8 0.6 0.8 V BE(ON) CE C h V =5.0V, I=1.0mA 100 300 100 300 FE CE C h V =5.0V, I=10mA 100 100 FE CE C h V =5.0V, I=100mA 75 75 FE CE C f V =5.0V, I =10mA, f=100MHz 150 150 MHz T CE C C V =10V, I =0, f=1.0MHz 6.0 4.5 pF ob CB E C V =0.5V, I =0, f=1.0MHz 25 30 pF ib BE C R5 (1-February 2010)CMPT8099 NPN CMPT8599 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT8099: CKB CMPT8599: C2W R5 (1-February 2010) www.centralsemi.com