X-On Electronics has gained recognition as a prominent supplier of CMST3906 TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CMST3906 TR Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

CMST3906 TR Central Semiconductor

CMST3906 TR electronic component of Central Semiconductor
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Part No.CMST3906 TR
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Central Semiconductor Bipolar Transistors - BJT 40Vcbo 40Vceo Comp 5.0Vebo 200mA 275mW
Datasheet: CMST3906 TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0721 ea
Line Total: USD 216.3 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5045
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3256
10 : USD 0.2134
100 : USD 0.1089
1000 : USD 0.0924
3000 : USD 0.0759
9000 : USD 0.0693
24000 : USD 0.0682
45000 : USD 0.066

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Tradename
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the CMST3906 TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMST3906 TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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CMST3904 NPN CMST3906 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMST3904, SILICON TRANSISTORS CMST3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for small signal general purpose amplifier and switching applications. MARKING CODES: CMST3904: 1AC CMST3906: 2AC SOT-323 CASE MAXIMUM RATINGS: (T =25C) SYMBOL CMST3904 CMST3906 UNITS A Collector-Base Voltage V 60 40 V CBO Collector-Emitter Voltage V 40 40 V CEO Emitter-Base Voltage V 6.0 5.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 275 mW D Operating and Storage Junction Temperature T T -65 to +150 C J stg , Thermal Resistance 455 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A CMST3904 CMST3906 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =30V, V=3.0V - 50 - 50 nA CEV CE EB BV I=10A 60 - 40 - V CBO C BV I=1.0mA 40 - 40 - V CEO C BV I=10A 6.0 - 5.0 - V EBO E V I =10mA, I=1.0mA - 0.20 - 0.25 V CE(SAT) C B V I =50mA, I=5.0mA - 0.30 - 0.40 V CE(SAT) C B V I =10mA, I=1.0mA 0.65 0.85 0.65 0.85 V BE(SAT) C B V I =50mA, I=5.0mA - 0.95 - 0.95 V BE(SAT) C B h V =1.0V, I=0.1mA 40 - 60 - FE CE C h V =1.0V, I=1.0mA 70 - 80 - FE CE C h V =1.0V, I=10mA 100 300 100 300 FE CE C h V =1.0V, I=50mA 60 - 60 - FE CE C h V =1.0V, I=100mA 30 - 30 - FE CE C f V =20V, I =10mA, f=100MHz 300 - 250 - MHz T CE C R4 (10-June 2010)CMST3904 NPN CMST3906 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A CMST3904 CMST3906 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS C V =5.0V, I =0, f=1.0MHz - 4.0 - 4.5 pF ob CB E C V =0.5V, I =0, f=1.0MHz - 8.0 - 10 pF ib BE C h V =10V, I =1.0mA, f=1.0kHz 1.0 10 2.0 12 k ie CE C -4 h V =10V, I =1.0mA, f=1.0kHz 0.5 8.0 0.1 10 x10 re CE C h V =10V, I =1.0mA, f=1.0kHz 100 400 100 400 fe CE C h V =10V, I =1.0mA, f=1.0kHz 1.0 40 3.0 60 S oe CE C NF V =5.0V, I =100mA, R =1.0k CE C S f=10Hz to 15.7kHz - 5.0 - 4.0 dB t V =3.0V, V =0.5V, I =10mA, I =1.0mA - 35 - 35 ns d CC BE C B1 t V =3.0V, V =0.5V, I =10mA, I =1.0mA - 35 - 35 ns r CC BE C B1 t V =3.0V, I =10mA, I =I=1.0mA - 200 - 225 ns s CC C B1 B2 t V =3.0V, I =10mA, I =I=1.0mA - 50 - 75 ns f CC C B1 B2 SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS LEAD CODES: 1) Base 2) Emitter 3) Collector MARKING CODES: CMST3904: 1AC CMST3906: 2AC CMST3904 NPN CMST3906 PNP R4 (10-June 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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