CMST5086
CMST5087
www.centralsemi.com
SURFACE MOUNT
DESCRIPTION:
PNP SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR CMST5086,
CMST5087 types are PNP silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERmini surface mount package,
designed for applications requiring high gain and low
noise.
MARKING CODES: CMST5086: 2PC
CMST5087: 2QC
SOT-323 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Collector-Base Voltage V 50 V
CBO
Collector-Emitter Voltage V 50 V
CEO
Emitter-Base Voltage V 3.0 V
EBO
Continuous Collector Current I 50 mA
C
Power Dissipation P 275 mW
D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance 455 C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
CMST5086 CMST5087
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I V=10V - 10 - 10 nA
CBO CB
I V=35V - 50 - 50 nA
CBO CB
BV I=100A 50 - 50 - V
CBO C
BV I=1.0mA 50 - 50 - V
CEO C
BV I=100A 3.0 - 3.0 - V
EBO E
V I =10mA, I=1.0mA - 0.30 - 0.30 V
CE(SAT) C B
V I =10mA, I=1.0mA - 0.85 - 0.85 V
BE(SAT) C B
h V =5.0V, I =0.1mA 150 500 250 800
FE CE C
h V =5.0V, I =1.0mA 150 - 250 -
FE CE C
h V =5.0V, I =10mA 150 - 250 -
FE CE C
f V =5.0V, I =500A, f=20MHz 40 - 40 - MHz
T CE C
C V =5.0V, I =0, f=1.0MHz - 4.0 - 4.0 pF
ob CB E
h V =5.0V, I =1.0mA, f=1.0kHz 150 600 250 900
fe CE C
NF V =5.0V, I =20mA, R =10k
CE C S
f=10Hz to 15.7kHz - 3.0 - 2.0 dB
NF V =5.0V, I =100A, R =3.0k
CE C S
f=1.0kHz - 3.0 - 2.0 dB
R3 (9-February 2010)CMST5086
CMST5087
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-323 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODES:
CMST5086: 2PC
CMST5087: 2QC
R3 (9-February 2010)
www.centralsemi.com