CMXD2004TO SURFACE MOUNT www.centralsemi.com TRIPLE ISOLATED OPPOSING DESCRIPTION: HIGH VOLTAGE The CENTRAL SEMICONDUCTOR CMXD2004TO SILICON SWITCHING DIODES consists of three (3) Isolated High Voltage Silicon Switching Diodes arranged in an alternating configuration in a SUPERmini SOT-26 surface mount package, and designed for high voltage switching applications. This device can be configured as a 900V switching diode. See optional mounting pad configuration. MARKING CODE: X04TO SOT-26 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 240 V R Peak Repetitive Reverse Voltage V 300 V RRM Average Forward Current I 200 mA O Continuous Forward Current I 225 mA F Peak Repetitive Forward Current I 625 mA FRM Peak Forward Surge Current, tp=1.0s I 4.0 A FSM Peak Forward Surge Current, tp=1.0s I 1.0 A FSM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=240V 100 nA R R I V =240V, T=150C 100 A R R A BV I=100A 300 V R R V I=100mA 1.0 V F F C V =0, f=1.0MHz 5.0 pF T R t I =I =30mA, I =3.0mA, R =100 50 ns rr F R rr L R2 (12-February 2010)CMXD2004TO SURFACE MOUNT TRIPLE ISOLATED OPPOSING HIGH VOLTAGE SILICON SWITCHING DIODES SOT 26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION OPTIONAL MOUNTING PADS For 900V Series Configuration (Dimensions in mm) LEAD CODE: 1) Anode D1 2) Cathode D2 3) Anode D3 4) Cathode D3 5) Anode D2 6) Cathode D1 MARKING CODE: X04TO R2 (12-February 2010) www.centralsemi.com