X-On Electronics has gained recognition as a prominent supplier of CTLT3410-M621 TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CTLT3410-M621 TR Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

CTLT3410-M621 TR Central Semiconductor

CTLT3410-M621 TR electronic component of Central Semiconductor
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Part No.CTLT3410-M621 TR
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Central Semiconductor Bipolar Transistors - BJT NPN Low Vce(SAT) 40Vcbo 25Vceo 0.9W
Datasheet: CTLT3410-M621 TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5302 ea
Line Total: USD 0.53 
Availability - 1353
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1353
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5302
10 : USD 0.4653
100 : USD 0.3245
500 : USD 0.2794
1000 : USD 0.2486
3000 : USD 0.2156
6000 : USD 0.2145
9000 : USD 0.2145
24000 : USD 0.2079

   
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RoHS - XON
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Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
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Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
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We are delighted to provide the CTLT3410-M621 TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CTLT3410-M621 TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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CTLT3410-M621 (NPN) CTLT7410-M621 (PNP) www.centralsemi.com SURFACE MOUNT COMPLEMENTARY DESCRIPTION: LOW V CE(SAT) The CENTRAL SEMICONDUCTOR CTLT3410-M621 SILICON TRANSISTORS and CTLT7410-M621 are Low V transistors in CE(SAT) a very small leadless 1x2mm surface mount package, designed for applications where small size, operational efficiency, and low energy consumption are prime requirements. Due to the leadless package design, these devices are capable of dissipating up to 3 times the power of similar devices in comparable sized surface mount packages. TLM621 CASE MARKING CODES: CTLT3410-M621: CB CTLT7410-M621: CD FEATURES: APPLICATIONS: High Operational Efficiency DC - DC Converters High Power to Footprint Ratio Switching Circuits V 1.0A = 250mV TYP CE(SAT) LCD Backlighting High Collector Current Battery Powered Portable Equipment Small TLM621 1x2mm Package MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 1.0 A C Peak Collector Current I 1.5 A CM Power Dissipation (Note 1) P 0.9 W D Operating and Storage Junction Temperature T T -65 to +150 C J, stg Thermal Resistance (Note 1) 139 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A NPN PNP SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS I V=40V 100 nA CBO CB I V=6.0V 100 nA EBO EB BV I=100A 40 V CBO C BV I=10mA 25 V CEO C BV I=100A 6.0 V EBO E V I =50mA, I=5.0mA 25 30 50 mV CE(SAT) C B V I =100mA, I=10mA 40 50 75 mV CE(SAT) C B V I =200mA, I=20mA 80 95 150 mV CE(SAT) C B V I =500mA, I=50mA 190 205 250 mV CE(SAT) C B V I =800mA, I=80mA 290 320 400 mV CE(SAT) C B V I =1.0A, I=100mA 360 400 450 mV CE(SAT) C B 2 Notes (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm R3 (1-August 2011)CTLT3410-M621 (NPN) CTLT7410-M621 (PNP) SURFACE MOUNT COMPLEMENTARY LOW V CE(SAT) SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A NPN PNP SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS V I =800mA, I=80mA 1.1 V BE(SAT) C B V V =1.0V, I=10mA 0.9 V BE(ON) CE C h V =1.0V, I=10mA 100 FE CE C h V =1.0V, I=100mA 100 300 FE CE C h V =1.0V, I=500mA 100 FE CE C h V =1.0V, I=1.0A 50 FE CE C f V =10V, I=50mA, f=100MHz 100 MHz T CE C C V =10V, I =0, f=1.0MHz (CMLT3410-M621) 6.0 10 pF ob CB E C V =10V, I =0, f=1.0MHz (CMLT7410-M621) 10 15 pF ob CB E TLM621 CASE - MECHANICAL OUTLINE SUGGESTED MOUNTING PADS (Dimensions in mm) R0 PIN CONFIGURATIONS LEAD CODES: 1) Collector 2) Collector 3) Base 4) Emitter CTLT3410-M621 5) Collector 6) Collector MARKING CODES: CTLT3410-M621: CB CTLT7410-M621: CD * Exposed pad P connects pins 1, 2, 5, and 6. CTLT7410-M621 R3 (1-August 2011) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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